Light emitting device with conversion structure
View Patent ↗The invention relates to a light-emitting device comprising a conversion structure and one or several LEDs ( 40 ), which emit light into the conversion structure. The light is then converted and emitted with a high radiant flux.
1. A light emitting device comprising an LED which emits light in the wavelength range of ≧220 nm to ≦550 nm and a conversion structure placed towards the LED without optical contact, which converts at least partly the light from the LED and emits incoherent light in the wavelength range of ≧300 nm to ≦000 nm, wherein the conversion structure has a refractive index n of ≧1.5 and ≦3 and a ratio A:E is ≧2:1 and ≦50000:1,
wherein the conversion structure comprises an entrance surface, where light emitted by the LED can enter the conversion structure and an exit surface, where light can exit the conversion structure,
the entrance surface having an entrance surface area A, the exit surface having an exit surface area E.
2. The light emitting device according to claim 1 , wherein at least 80% of the light emitted within the conversion structure exits through the exit surface.
3. The light emitting device according to claim 1 , wherein the entrance surface area of the conversion structure has an average surface roughness of ≧1 nm and ≦500 nm.
4. The light emitting device according to claim 1 , wherein thermal quenching (TQ) of the conversion structure is ≧70% and ≦100% at 100° C. or TQ 50% -value is ≧120° C. and ≦400° C.
5. The light emitting device according to claim 1 , wherein ≧50% and ≦100% of the light that enters the conversion structure from the LED is converted by the conversion structure.
6. The light emitting device according to claim 1 , wherein luminance at the exit surface of the conversion structure L exit is ≧0.1 and ≦300 times an average LED luminance L LED used for the light emitting device.
7. The light emitting device according to claim 1 , wherein the conversion structure is essentially made out of a monocrystalline material or a cubic monolithic polycrystalline material.
8. The light emitting device according to claim 1 , wherein the conversion structure is essentially made of material selected from the group consisting of:
(M I 1-x-y M II x M III y ) 3 (M IV 1-z M V z ) 5 O 12 — where M I is selected from the group consisting of: Y, Lu or mixtures thereof, M II is selected from the group consisting of: Gd, La, Yb or mixtures thereof, M III is selected from the group consisting of: Tb, Pr, Ce, Er, Nd, Eu or mixtures thereof, M IV is Al, M V is selected from the group consisting of: Ga, Sc or mixtures thereof, and 0≦x≦1, 0≦y≦0.1, 0≦z≦1,
(M I 1-x-y M II x M III y ) 2 O 3 — where M I is selected from the group consisting of: Y, Lu or mixtures thereof, M II is selected from the group consisting of: Gd, La, Yb or mixtures thereof, M III is selected from the group consisting of: Tb, Pr, Ce, Er, Nd, Eu, Bi, Sb or mixtures thereof, and 0≦x≦1, 0≦y≦0.1,
(M I 1-x-y M II x M III y )S 1-z Se z — where M I is selected from the group consisting of: Ca, Sr, Mg, Ba or mixtures thereof, M II is selected from the group consisting of: Ce, Eu, Mn, Tb, Sm, Pr, Sb, Sn or mixtures thereof, M III is selected from the group consisting of: K, Na, Li, Rb, Zn or mixtures thereof, and 0≦x≦0.01, 0≦y≦0.05, 0≦z≦1,
(M I 1-x-y M II x M III y )O— where M I is selected from the group consisting of: Ca, Sr, Mg, Ba or mixtures thereof, M II is selected from the group consisting of: Ce, Eu, Mn, Tb, Sm, Pr or mixtures thereof, M III is selected from the group consisting of: K, Na, Li, Rb, Zn or mixtures thereof, and 0≦x≦0.1, 0≦y≦0.1,
(M I 2-x M II x M III 2 )O 7 — where M I is selected from the group consisting of: La, Y, Gd, Lu, Ba, Sr or mixtures thereof, M II is selected from the group consisting of: Eu, Tb, Pr, Ce, Nd, Sm, Tm or mixtures thereof, M III is selected from the group consisting of: Hf, Zr, Ti, Ta, Nb or mixtures thereof, and 0≦x≦1,
(M I 1-x M II x M III 1-y M IV y )O 3 — where M I is selected from the group consisting of: Ba, Sr, Ca, La, Y, Gd, Lu or mixtures thereof, M II is selected from the group consisting of: Eu, Tb, Pr, Ce, Nd, Sm, Tm or mixtures thereof, M III is selected from the group consisting of: Hf, Zr, Ti, Ta, Nb or mixtures thereof, and M IV is selected from the group consisting of: Al, Ga, Sc, Si or mixtures thereof, and 0≦x≦0.1, 0≦y≦0.1, or mixtures thereof.
9. The light emitting device according to claim 1 , wherein the conversion structure comprises a further surface which is neither an exit surface nor an entrance surface, and wherein the further surface is provided with a reflective coating.
10. The light emitting device according to claim 1 , wherein the entrance surface is one of a plurality of entrance surfaces having a corresponding plurality of entrance surface areas, and wherein said A is a summation of the plurality of entrance surface areas.
11. The light emitting device according to claim 1 , wherein the exit surface is one of a plurality of exit surfaces having a corresponding plurality of exit surface areas, and wherein said E is a summation of the plurality of exit surface areas.
12. The light emitting device according to claim 1 , wherein the ratio A:E is ≧5:1 and ≦5000:1.
13. The light emitting device according to claim 1 , wherein the ratio A:E is ≧10:1 and ≦3000:1.
14. The light emitting device according to claim 1 , wherein the ratio A:E is ≧20:1 and ≦1000:1.
15. The light emitting device according to claim 1 , wherein the ratio A:E is ≧50:1 and ≦500:1.
16. The light emitting device according to claim 1 , wherein the conversion structure has a refractive index n of ≧1.8 and ≦2.6.
17. The light emitting device according to claim 1 , including a light scattering element that scatters the light from the light conversion element.
18. The light emitting device according to claim 1 , wherein the exit surface includes at least one of: a scattering structure, a pyramid-like structure, a microlens structure, and a parabolic structure.