Organic thin film transistor material, organic thin film transistor, field-effect transistor, switching element, organic semiconductor material and organic semiconductor film
View Patent ↗An objective is to provide an organic thin film transistor material exhibiting an excellent property as a transistor together with reduced aging degradation, and also to provide an organic thin film transistor, a field-effect transistor, a switching element, an organic semiconductor material and an organic semiconductor film employing the organic thin film transistor material. Disclosed is an organic thin film transistor material possessing a compound represented by the following Formula (1). where A composed of a condensed ring formed with a 6 membered aromatic cycle or a 6 membered aromatic heterocycle represents C—R, N or P; at least one of As is N or P; R represents a hydrogen atom, a halogen atom or a substituent; and R may be bonded with other Rs with each other to form a ring.
1. An organic thin film transistor material comprising a polycondensed heteroaromatic compound represented by the following Formula (1):
where each A independently represents a nonmetal atom, provided that at least one of plural As is an atom other than a carbon atom, or at least two of nonmetal atoms represented by A are carbon atoms and when each of the carbon atoms comprises a substituent, substituents may be bonded with each other to form a ring.
2. The organic thin film transistor material of claim 1 ,
wherein the polycondensed heteroaromatic compound of Formula (1) is a compound represented by the following Formula (2), (3) or (4):
where each A in Formulae (2), (3) and (4) independently represents a nonmetal atom, provided that at least one of plural As is an atom other than a carbon atom.
3. The organic thin film transistor material of claim 1 ,
wherein A is N, P or C—R,
where R is a hydrogen atom, a halogen atom or a substituent, and R may be bonded with other Rs with each other to form a ring.
4. The organic thin film transistor material of claims 1 ,
wherein A is N or C—R,
where R is a hydrogen atom, a halogen atom or a substituent, and R may be bonded with other Rs with each other to form a ring.
5. The organic thin film transistor material of claims 1 ,
wherein at least one of (C—R)s represented by A is C—C═C—R 1 ,
where R 1 represents a substituent.
6. The organic thin film transistor material of claim 1 ,
wherein the polycondensed heteroaromatic compound represented by Formula (1) is a compound represented by the following Formula (5):
where A in Formula (5) is synonymous with A in Formula (1), and R 1 represents a substituent.
7. The organic thin film transistor material of claim 6 ,
wherein A and A 1 are N or C—R,
where R is a hydrogen atom, a halogen atom or a substituent,
and R may be bonded with other Rs with each other to form a ring.
8. The organic thin film transistor material of claim 6 ,
wherein A 1 is C—C≡C—R 1 ,
where R 1 is synonymous with A in Formula (5).
9. An organic thin film transistor comprising a semiconductor layer formed from the organic thin film transistor material of claims 1 .
10. A field-effect transistor comprising an organic charge transport material and a gate electrode connected directly or indirectly to the organic charge transport material,
wherein an electric current in the organic charge transport material is controlled via application of an electric potential between the gate electrode and the organic charge transport material, and
wherein the organic charge transport material is the organic thin film transistor material of claim 1 .
11. A switching element comprising the organic thin film transistor of claim 9 .
12. An organic semiconductor material comprising a compound represented by any one of Formulae (1)-(5).
13. An organic semiconductor film comprising the organic semiconductor material of claim 12 .
14. An organic semiconductor film formed via the steps of:
(a) dissolving or dispersing the organic semiconductor material of claim 12 in an organic solvent; and
(b) conducting a drying process after coating a solution or dispersant obtained in step (a).
15. A switching element comprising the field-effect transistor of claim 10 .