Electronic devices
View Patent ↗A method of producing an electronic device including the steps of: (i) providing a body including a first, conductive element separated from a first surface of said body by a portion of said body; (ii) removing a selected portion of said body to define a recess in said body extending from said first surface and via which a portion of said first element is exposed; and (iii) putting into said recess a liquid medium carrying a first material; wherein said first material is preferentially deposited on the exposed inner surface of said body defining said recess, and wherein the deposited first material is used to provide a connection between said first element and a second conductive element located within said body or later deposited over said first surface of said body.
1. A method of producing an electronic device including the steps of:
(i) providing a body including a first conductive element separated from a first surface of said body by a portion of said body including at least one non-conductive layer;
(ii) removing a selected portion of said body to define a recess in said body extending from said first surface down through said at least one non-conductive layer above said first conductive element and through said first conductive element to below said first conductive element and via which a portion of said first conductive element is exposed; and
(iii) depositing a conductive material into said recess through said at least one non-conductive layer above said first conductive element and through said first conductive element to below said first conductive element, to provide a conductive connection between said exposed portion of said first conductive element and a second conductive element above said at least one non-conductive layer, wherein said first conductive element is part of a patterned conductor layer forming source and drain electrodes of a transistor device, and wherein said second conductive element comprises a pixel electrode.
2. The method according to claim 1 , wherein the recess in said body is defined by laser ablation of said body.
3. The method according to claim 1 , wherein the thickness of said body in between said first surface of said body and said first conductive element exceeds 1 μm.
4. The method according to claim 3 , wherein the thickness of said body in between said first surface of said body and said first conductive element exceeds 5 μm.
5. The method according to claim 1 , wherein said conductive material deposited in said recess is not used to form any conductive connection to any conductive element below said first conductive element.
6. The method according to claim 1 , wherein said second conductive element is conductively connected to said first conductive element only via said conductive material deposited in the recess.
7. The method according to claim 1 , wherein said first conductive element is the lowest conductive element to which the recess is to be used to provide a conductive connection from said second conductive element.
8. The method according to claim 1 , wherein said pixel electrode is a pixel electrode for an active-matrix display.
9. The method according to claim 1 , wherein said transistor device comprises a gate electrode, and said at least one non-conductive layer comprises a dielectric layer between said gate electrode and said pixel electrode.
10. The method according to claim 9 , wherein said pixel electrode is a pixel electrode for an active-matrix display.