Reference voltage generator providing a temperature-compensated output voltage
View Patent ↗The present invention concerns a reference voltage generator ( 40 ) that provides a reference voltage (Vref new). The voltage generator ( 30 ) is operated at a supply voltage (Vdd) being lower than the Silicon bandgap voltage. It comprises a MOSFET transistor (MN; MN 3 ; MP 4 ; MP 7 ) serving as transconductor (Gptat). An input node for feeding a drain current (I ptat ) into the drain of said MOSFET transistor (MN; MN 3 ; MP 4 ; MP 7 ) is provided and an output node is connected to the drain and gate of said MOSFET transistor (MN; MN 3 ; MP 4 ; MP 7 ). A current generator ( 42 ) allows the MOSFET transistor (MN; MN 3 ; MP 4 ; MP 7 ) to be operated in a specific mode where the drain current (I ptat ) has a positive temperature coefficient (α ptat ) and the transconductor (Gptat) has a negative temperature coefficient (α ptat ). The dimensions (W, L) of the MOSFET transistor are chosen such that said negative temperature coefficient (αGM) approximates said positive temperature coefficient (α ptat ) such that said reference voltage (Vref new), as provided at said output node, is temperature-compensated.
1. Reference voltage generator providing a reference voltage, the voltage generator being operated at a supply voltage being lower than the Silicon bandgap voltage, comprising
a MOSFET transistor with drain, source and gate, said MOSFET transistor serving as transconductor,
an input node for feeding a drain current into the drain of said MOSFET transistor,
an output node being connected to the drain of said MOSFET transistor,
a current generator allowing said MOSFET transistor to be operated in a specific mode where the drain current has a positive temperature coefficient and the transconductor has a negative temperature coefficient,
whereby said MOSFET transistor's dimensions are chosen such that said negative temperature coefficient approximates said positive temperature coefficient such that said reference voltage, as provided at said output node, is temperature-compensated.
2. The Reference voltage generator of claim 1 , wherein the MOSFET transistor provides a gate-to-source voltage between its gate and source, said gate-to-source voltage having a negative temperature coefficient.
3. The Reference voltage generator of claim 1 , wherein the gate-to-source voltage between the gate and source of the MOSFET transistor is smaller than a predetermined voltage when said MOSFET transistor is operated in said specific mode.
4. The Reference voltage generator of claim 1 , wherein the drain current is proportional to the absolute temperature since its temperature coefficient is positive.
5. The Reference voltage generator according to claim 1 , wherein said MOSFET transistor is an n-type MOSFET transistor, and preferably an n-type CMOS transistor, the gate of said MOSFET transistor being connected to said output node.
6. The Reference voltage generator according to claim 1 , wherein said MOSFET transistor is a p-type MOSFET transistor, and preferably a p-type CMOS transistor, the gate of said MOSFET transistor being connected to ground.
7. The Reference voltage generator according to claim 1 , wherein said transconductor comprises two or more stacked MOSFET transistors.