Method of manufacturing organic film transistor
View Patent ↗A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.
1. A method of producing an organic thin film transistor comprising sequential steps of forming the following elements on a substrate:
forming a gate electrode;
forming a gate insulating layer;
forming an organic semiconductor layer;
forming a source electrode; and
forming a drain electrode,
wherein
the organic semiconductor layer comprises an organic semiconductor material exhibiting an exothermic point and an endothermic point in differential scanning calorimetry; and
the organic semiconductor layer is subjected to a heat treatment carried out at a temperature not less than the exothermic point and less than the endothermic point, after the organic semiconductor layer is formed.
2. The method of claim 1 , wherein the organic semiconductor layer is formed by using a solution or a dispersion liquid comprising an organic semiconductor material.
3. The method of claim 1 , wherein the organic semiconductor material is a π-conjugated compound.
4. The method of claim 1 , wherein a weight average molecular weight of the organic semiconductor material is 5000 or less.
5. The method of claim 1 , wherein the organic semiconductor layer is subjected to a heat treatment after the source electrode or the drain electrode is formed.