Method for forming on-chip lens including process of forming depression by using etch-back method, and method for manufacturing solid-state imaging apparatus including process of forming in-layer micro lens using the method for forming on-chip lens
View Patent ↗In a method for forming a lens according to the present invention, a digging step of digging a depression includes a depositing substep of depositing a pattern film on a surface of a base film, the pattern film being made of a second material and in an inverted shape of the depression, a forming substep of forming an embedding film to flatten the surface of the pattern film, the embedding film being made of a third material and embedding therein the pattern film, and an etch-back substep of conducting etch-back on a surface of the embedding film toward the base film to dig the depression, and an etch rate of the second material is higher than an etch rate of the third material.
1. A method for forming an on-chip lens, comprising:
a depositing step of depositing a base film on a surface of a substrate, the base film being translucent and made of a first material; and
a digging step of digging a depression in a portion of the base film, wherein
the digging step includes
a depositing substep of depositing a pattern film on a surface of the base film, the pattern film being made of a second material and in an inverted shape of the depression,
a forming substep of forming an embedding film to flatten the surface of the pattern film, the embedding film being made of a third material and embedding therein the pattern film, and
an etch-back substep of conducting etch-back on a surface of the embedding film toward the base film to dig the depression, and
an etch rate of the second material is higher than an etch rate of the third material.
2. The method of claim 1 , wherein
an etch rate ratio of the second material to the third material is from 1.5 to 2.5 inclusive.
3. The method of claim 1 , wherein
an etch rate ratio of the third material to the first material is from 0.5 to 1.5 inclusive.
4. The method of claim 1 , wherein
an etch rate ratio of the second material to the first material is from 1.5 to 2.5 inclusive.
5. The method of claim 1 , wherein
in the depositing substep of depositing the pattern film,
a photosensitive resin is used as the second material,
a film made of the photosensitive resin is formed on the base film,
a mask having a prescribed opening is formed on the film made of the photosensitive resin, and
the film made of the photosensitive resin is exposed and developed from above the mask to form the pattern film.
6. The method of claim 1 , wherein
in the forming substep of forming the embedding film,
a viscous fluid material with hardenability is used as the third material, and
the viscous fluid material is applied on the pattern film formed on the base film to form the embedding film.
7. The method of claim 1 , wherein
in the depositing substep of depositing the pattern film and the forming substep of forming the embedding film,
a synthetic resin is used as the second material and the third material, and
a double bond density of the second material is higher than a double bond density of the third material.
8. The method of claim 1 , wherein
in the depositing substep of depositing the pattern film,
silicon nitride or silicon nitroxide is used as the second material, and
in the forming substep of forming the embedding film,
the etch-back is conducted by dry etching using a gas including fluorine.
9. The method of claim 1 , wherein further comprising
a filling step of filling a fourth material in the depression formed in the digging step of digging the depression, the fourth material being translucent and having a refractive index different from a refractive index of the first material.
10. A method for manufacturing a solid-state imaging apparatus, comprising, for forming an in-layer lens, of:
a depositing step of depositing a base film on a surface of a substrate, the base film being translucent and made of a first material; and
a digging step of digging a depression in a portion of the base film, wherein
the digging step includes
a depositing substep of depositing a pattern film on a surface of the base film, the pattern film being made of a second material and in an inverted shape of the depression,
a forming substep of forming an embedding film to flatten the surface of the pattern film, the embedding film being made of a third material and embedding therein the pattern film, and
an etch-back substep of conducting etch-back on a surface of the embedding film toward the base film to dig the depression, and
an etch rate of the second material is higher than an etch rate of the third material.
11. The method of claim 10 , wherein
an etch rate ratio of the second material to the third material is from 1.5 to 2.5 inclusive.
12. The method of claim 10 , wherein
an etch rate ratio of the third material to the first material is from 0.5 to 1.5 inclusive.
13. The method of claim 10 , wherein
an etch rate ratio of the second material to the first material is from 1.5 to 2.5 inclusive.
14. The method of claim 10 , wherein
in the depositing substep of depositing the pattern film,
a photosensitive resin is used as the second material,
a film made of the photosensitive resin is formed on the base film,
a mask having a prescribed opening is formed on the film made of the photosensitive resin, and
the film made of the photosensitive resin is exposed and developed from above the mask to form the pattern film.
15. The method of claim 10 , wherein
in the forming substep of forming the embedding film,
a viscous fluid material with hardenability is used as the third material, and
the viscous fluid material is applied on the pattern film formed on the base film to form the embedding film.
16. The method of claim 10 , wherein
in the depositing substep of depositing the pattern film and the forming substep of forming the embedding film,
a synthetic resin is used as the second material and the third material, and
a double bond density of the second material is higher than a double bond density of the third material.
17. The method of claim 10 , wherein
in the depositing substep of depositing the pattern film,
silicon nitride or silicon nitroxide is used as the second material, and
in the forming substep of forming the embedding film,
the etch-back is conducted by dry etching using a gas including fluorine.
18. The method of claim 10 , wherein
a filling step of filling a fourth material in the depression formed in the digging step of digging the depression, the fourth material being translucent and having a refractive index different from a refractive index of the first material.