IP Library Granted Patent US 7,633,424
Granted Patent B1
US 7,633,424 · App. 11/731,658 · Granted Dec 15, 2009

Wide temperature range dielectric absorber

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Quick Facts
Patent No.
US 7,633,424
App. No.
11/731,658
Granted
Dec 15, 2009
Kind
B1
Abstract

According to one exemplary embodiment, a wide temperature range dielectric absorber includes a dielectric absorber comprising a blend of lanthanum oxide, strontium oxide, and cobalt oxide, and is represented by (1−z)[La 1−x Sr x CoO 3±y ]+z[La 2−x Sr x CoO 4±y ]. The dielectric absorber includes a first crystalline structure existing independently from a second crystalline structure causing the dielectric absorption composition to have a wide temperature range of electromagnetic radiation absorption. In one embodiment, the first crystalline structure is a perovskite crystalline structure and the second crystalline structure is a potassium nickel fluoride crystalline structure.

Claims (22)

1. A dielectric absorber comprising:

a primary component group having a first crystalline structure and a second crystalline structure, and comprising lanthanum oxide, strontium oxide, and cobalt oxide, wherein one of said first crystalline structure and said second crystalline structure is a potassium nickel fluoride crystalline structure;

wherein said first crystalline structure exists independently from said second crystalline structure such that said dielectric absorber substantially uniformly absorbs electromagnetic radiation over a wide temperature range.

2. The dielectric absorber of claim 1 wherein said primary component group is represented by (1−z)[La 1−x Sr x CoO 3±y ]+z[La 2−x Sr x CoO 4±y ].

3. The dielectric absorber of claim 2 wherein x is greater than 0.0 and less than or equal to 0.9.

4. The dielectric absorber of claim 2 wherein z is greater than or equal to 0.0 and less than or equal to 1.0.

5. The dielectric absorber of claim 1 wherein said wide temperature range is between approximately 700° C. and approximately 1100° C.

6. The dielectric absorber of claim 1 wherein said first crystalline structure is a perovskite crystalline structure and said second crystalline structure is a potassium nickel fluoride crystalline structure.

7. The dielectric absorber of claim 1 wherein said primary component group is represented by [La 1−x Sr x CoO 3±y ], wherein cobalt exhibits two or more oxidation states.

8. The dielectric absorber of claim 1 wherein said primary component group is represented by [La 2−x Sr x CoO 4±y ], wherein cobalt exhibits two or more oxidation states.

9. A dielectric absorber comprising:

a primary component group having a first crystalline structure and a second crystalline structure, and comprising lanthanum oxide, strontium oxide, and cobalt oxide, wherein one of said first crystalline structure and said second crystalline structure is a potassium nickel fluoride crystalline structure;

wherein said first crystalline structure exists independently from said second crystalline structure such that said first crystalline structure absorbs electromagnetic radiation over a first temperature range and said second crystalline structure absorbs electromagnetic radiation over a second temperature range.

10. The dielectric absorber of claim 9 wherein said primary component group is represented by (1−z)[La 1−x Sr x CoO 3±y ]+z[La 2−x Sr x CoO 4±y ].

11. The dielectric absorber of claim 10 wherein x is greater than 0.0 and less than or equal to 0.9.

12. The dielectric absorber of claim 10 wherein z is greater than or equal to 0.0 and less than or equal to 1.0.

13. The dielectric absorber of claim 9 wherein said first crystalline structure is perovskite crystalline structure and said second crystalline structure is a potassium nickel fluoride crystalline structure.

14. A method for widening a temperature range of electromagnetic absorption by a dielectric absorber, said method comprising:

mixing lanthanum oxide, strontium oxide, and cobalt oxide to form a primary component group, said primary component group being represented by (1−z)[La 1−x Sr x CoO 3±y ]+z[La 2−x Sr x CoO 4±y ];

said dielectric absorber having a first crystalline structure existing independently from a second crystalline structure, wherein said first crystalline structure is a perovskite crystalline structure, and said second crystalline structure is a potassium nickel fluoride crystalline structure.

15. The method of claim 14 , wherein x is greater than 0.0 and less than or equal to 0.9.

16. The method of claim 14 wherein z is greater than or equal to 0.0 and less than or equal to 1.0.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 14, 2023
From: TRANS-TECH, INC.
To: ALLUMAX TTI, LLC
Reel/Frame 063991/0097 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2023
From: SKYWORKS SOLUTIONS, INC.
To: TRANS-TECH, INC.
Reel/Frame 063727/0270 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2016
From: TRANS-TECH, INC.
To: SKYWORKS SOLUTIONS, INC.
Reel/Frame 038260/0189 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 2, 2016
From: SKYWORKS SOLUTIONS, INC.
To: TRANS-TECH, INC.
Reel/Frame 037974/0433 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2007
From: HILL, MICHAEL D.
To: SKYWORKS SOLUTIONS, INC.
Reel/Frame 019185/0001 →