IP Library › Granted Patent US 7,361,929
Granted Patent B2
US 7,361,929 · App. 11/732,936 · Granted Apr 22, 2008

Field-effect transistors with weakly coupled layered inorganic semiconductors

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Quick Facts
Patent No.
US 7,361,929
App. No.
11/732,936
Granted
Apr 22, 2008
Kind
B2
Abstract

A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Claims (16)

1. An apparatus, comprising:

a field-effect transistor, the transistor comprising:

source, drain, and gate electrodes;

an inorganic semiconductor layer, a portion of the layer physically connecting the source electrode and the drain electrode; and

a dielectric layer interposed between the gate electrode and the inorganic semiconductor layer, the gate electrode being configured to control a conductivity of an active channel part of the inorganic semiconductor layer; and

wherein the inorganic semiconductor layer comprises a metal halide or a bivalent metal hydroxide.

2. The apparatus of claim 1 , further comprising:

a non-crystalline and mechanically flexible substrate, the field effect transistor being located on the substrate.

3. The apparatus of claim 2 , wherein the substrate is a material that includes a plastic or a polymer.

4. The apparatus of claim 1 , wherein the inorganic semiconductor layer is crystalline.

5. The apparatus of claim 1 , wherein the inorganic semiconductor layer comprises a metal halide.

6. The apparatus of claim of claim 5 , further comprising:

a non-crystalline and mechanically flexible substrate, the field effect transistor being located on the substrate.

7. The apparatus of claim 1 , wherein the inorganic semiconductor layer comprises a bivalent metal hydroxide.

8. The apparatus of claim 7 , further comprising:

a non-crystalline and mechanically flexible substrate, the field effect transistor being located on the substrate.