Staggered vertical comb drive fabrication method
View Patent ↗The invention relates to a method of fabrication of staggered vertical comb drive actuators with relaxed lateral alignment tolerances. A device layer of a wafer is first etched from a front side using a self-aligned two-layer mask to define interdigited fingers of both moving and stationary combs. A second etch step is used for vertically thinning one of the two sets of fingers by selectively removing their top portions. The front side of the wafer is then bonded to a carrier wafer. The wafer is then selectively etched from the back side of the device layer so as to remove lower portions of the second set of fingers, thereby forming interdigited moving and stationary combs having vertically offset fingers.
1. A method for fabricating a staggered vertical comb drive, comprising the steps of:
a) providing a wafer comprising a device layer;
b) etching the device layer to form therein two comb structures comprising a first set of fingers interdigited with a second set of fingers;
c) removing a top portion of each finger from the first set of fingers by etching, so as to vertically shorten the first set of fingers; and,
d) removing a lower portion of each finger from the second set of fingers by etching from a back side of the wafer, so as to vertically shorten the second set of fingers resulting in said second set of fingers being vertically offset from the first set of fingers.
2. A method according to claim 1 , wherein step (a) includes the step of forming a two-layer mask over the device layer exposing portions thereof between fingers of the first and second sets.
3. A method according to claim 2 , wherein the step of forming the two-layer mask comprises the steps of:
a1) forming a first mask over the device layer so as to expose portions thereof corresponding to the first set of fingers,
a2) disposing, over the device layer and the first mask, a masking layer which is substantially resistant to an etch process used in step (b); and,
a3) removing portions of the masking layer to form a second mask defining fingers of the first and second sets and exposing portions of the wafer therebetween.
4. A method according to claim 3 , wherein step (a3) is followed by the step of
a4) removing exposed portions of the first mask pattern using an etch process to which the masking layer is resistant, so as to align the first and second mask patterns over portions of the device layer wherefrom the second set of fingers is formed.
5. A method according to claim 4 comprising the step of removing the first mask prior to step (c).
6. A method according to claim 1 , wherein step d) comprises the step of:
d1) first forming a third mask on the back side of the wafer to protect the first set of fingers during the etching in step (d), and to expose to said etchings the lower portions of the second set of fingers.
7. A method according to claim 1 , further comprising the step of
e) attaching a carrier wafer to the device layer following step (c) and prior to step (d).
8. A method according to claim 7 , wherein the wafer further comprises a base layer and an isolation layer, wherein the isolation layer is sandwiched between the device layer and the base layer.
9. A method according to claim 8 , further comprising the step of thinning the wafer by at least partially removing the base layer prior to step (d).
10. A method according to claim 1 , wherein the device layer comprises a conductive layer.
11. A method according to claim 1 , wherein the device layer comprises an etch stop layer.
12. A method according to claim 1 , wherein the etching in one of steps (c) and (d) is timed.
13. A method according to claim 11 , wherein the etch stop layer is for stopping etching of the first or second sets of fingers in at least one of steps (c) and (d), respectively.
14. A method according to claim 1 , wherein the device layer comprises one or more semiconductor layers.
15. A method according to claim 14 , wherein the one or more semiconductor layers comprise silicon.
16. A method according to claim 8 , wherein the isolation layer comprises silicon oxide.
17. A method according to claim 3 , wherein the masking layer used in step (a2) is a photoresist.
18. A method according to claim 3 , wherein the first mask in step (a1) is formed from an oxide layer.