ACTIVE AREA BONDING COMPATIBLE HIGH CURRENT STRUCTURES
A semiconductor structure is provided. In one embodiment, the structure comprises at least one active device located in a substrate and directly under a bond pad. A conductor is located between the bond pad and the substrate. The conductor has a plurality of gaps filled with insulating material. The insulating material is harder than the conductor.
1 . A semiconductor structure, the structure comprising:
at least one active device located in a substrate and directly under a bond pad;
a conductor located between the bond pad and the substrate, the conductor having a plurality of gaps; and
insulating material filling the gaps, the insulating material being harder than the conductor.
2 . The structure of claim 1 , further comprising:
the gaps extending in a direction of current flow through the conductor.
3 . The structure of claim 1 , further comprising:
a plurality of metal layers, the conductor formed from one of the metal layers; and
a plurality of insulation layers separating the plurality of metal layers from each other.
4 . The structure of claim 3 , wherein an insulation layer of the plurality of insulation layers that is positioned between the conductor and the bond pad is relatively thick compared to the remaining insulation layers.
5 . The structure of claim 3 , wherein the insulating layer that is positioned between the conductor and the bond pad has a thickness of at least 1.5 μm.
6 . The structure of claim 3 , wherein the plurality of the metal layers includes a top metal layer, the bond pad formed on the top metal layer.
7 . The structure of claim 6 , wherein the top metal layer further comprises:
a sub-layer of material that is relatively stiff compared to the remaining portions of the top metal layer.
8 . The structure of claim 3 , wherein the plurality of metal layers provide functional interconnects under the bond pad.
9 . A semiconductor structure, the structure comprising:
at least one active device formed in a substrate;
a top metal layer, the top metal layer including a sub-layer of relatively stiff material, wherein the sub-layer relatively stiff compared to the reaming portion of the top metal layer
a bond pad formed on the top metal layer directly over the at least one active device;
at least one conductor between the active device and the bond pad; and
at least one insulation layer separating the at least one conductor from the top metal layer.
10 . The structure of claim 9 , further comprising:
the conductor having a plurality of gaps; and
insulating material filling the gaps, the insulating material being harder than the conductor.
11 . The structure of claim 10 , wherein the gaps extend in a direction of current flow through the conductor.
12 . The structure of claim 9 , wherein the at least one insulating layer separating the at least one conductor from the top metal layer has a thickness selected to prevent cracking.
13 . The structure of claim 9 , wherein the at least one insulating layer separating the at least one conductor from the top metal layer has a thickness of at least 1.5 μm.
14 . The structure of claim 9 , wherein the sub-layer is made of one of TiN, SiN and TiW.
15 . A semiconductor structure, the structure comprising:
a substrate;
at least one device formed in the substrate;
a plurality of intermediate conductive layers;
a plurality of insulation layers separating the intermediate conductive layers;
a top conductive layer;
a bond pad formed on the top conductive layer, wherein the bond pad is directly over the at least one device formed in the substrate; and
a top insulating layer separating the top conductive layer from an intermediate conductive layer closest the top conductive layer, the top insulating layer being relatively thick compared to each of the plurality of insulation layers.
16 . The structure of claim 15 , wherein the top insulation layer has a thickness selected to prevent cracking.
17 . The structure of claim 15 , wherein the top insulation layer has a thickness of at least 1.5 μm.
18 . The structure of claim 15 , wherein the top conductive layer includes a sub-layer of relatively stiff material compared to the remaining top conductive layer.
19 . The structure of claim 15 , further comprising:
a conductor formed form the intermediate conductive layer closest the top conductive layer directly under the bond pad, the conductor having a plurality of gaps; and
insulating material filling the gaps, wherein the insulation material is harder than the conductor.
20 . The structure of claim 19 , wherein the gaps extend in a direction of current flow through the conductor.