Thin film transistor array panel and manufacturing method thereof

1. A manufacturing method of a thin film transistor array panel, the method comprising:

forming a first conductive layer on a substrate;

forming a gate insulating layer on the first conductive layer;

forming a first insulating layer on the gate insulating layer;

forming a first insulating pattern including a first opening by patterning the first insulating layer;

forming a gate insulating member and a gate line by etching the gate insulating layer and the first conductive layer using the first insulating pattern as a mask;

forming an organic semiconductor in the first opening;

sequentially forming a passivation layer and a second insulating layer on the organic semiconductor and the first insulating pattern;

forming a second insulating pattern by patterning the second insulating layer;

etching the passivation layer using the second insulating pattern as a mask;

depositing a second conductive layer on the second insulating pattern, on portions of the substrate that are exposed through second openings in the etched passivation layer, and on portions of the first insulating pattern and the organic semiconductor that are exposed through third openings in the etched passivation layer;

forming a pixel electrode by removing the second insulating pattern and first portions of the second conductive layer that are located on the second insulating pattern, leaving behind second portions of the second conductive layer that are on the substrate in the second openings in the etched passivation layer, wherein the second portions of the second conductive layer are used as the pixel electrode; and

forming a data line including a source electrode, and a drain electrode facing the source electrode by depositing a third conductive layer and patterning the third conductive layer by photolithography and etching.

2. The method of claim 1 , wherein forming the first insulating pattern comprises:

forming first portions and second portions that are thinner than the first portions by patterning the first insulating layer; and

forming the first opening by removing the second portions.

3. The method of claim 2 , wherein forming the first portions and the second portions includes using a slit mask or a half-tone mask.

4. The method of claim 2 , wherein forming the first opening includes removing the second portions by ashing.

5. The method of claim 1 , wherein the first insulating layer is thicker than the first insulating pattern.

6. The method of claim 1 , wherein forming the pixel electrode includes removing the second insulating pattern and the second conductive layer located on the second insulating pattern by lift-off.

7. The method of claim 1 , wherein forming the second insulating pattern comprises:

forming third portions and fourth portions that are thinner than the third portions by patterning the second insulating layer; and

removing the fourth portions.

8. The method of claim 7 , wherein forming the third portions and the fourth portions includes using a slit mask or a halftone mask.

9. The method of claim 1 , wherein forming the organic semiconductor includes an inkjet printing process.

10. The method of claim 1 , wherein the first insulating layer and the second insulating layer include a photosensitive organic material.

11. The method of claim 10 , wherein the first insulating layer includes a negative photosensitive organic material and the second insulating layer includes a positive photosensitive organic material.

12. The method of claim 1 , wherein depositing the second conductive layer is performed at room temperature.