Integrated stacked capacitor and method of fabricating same
View Patent ↗An integrated stacked capacitor comprises a first capacitor film ( 46 ) of polycrystalline silicide, a second capacitor film ( 48 ) and a first dielectric ( 26 ) sandwiched between the first capacitor film ( 46 ) and second capacitor film ( 48 ). A second dielectric ( 34 ) and a third capacitor film ( 50 ) are provided. The second dielectric ( 34 ) is sandwiched between the second capacitor film ( 48 ) and third capacitor film ( 50 ). A method for fabrication of an integrated stacked capacitor comprises the following sequence of steps: applying a polysilicide layer ( 20 ) to form the first capacitor film ( 46 ); applying a first dielectric ( 26 ); applying a first metallization layer ( 28 ) to form the second capacitor film ( 48 ); applying a second dielectric ( 34 ); and applying a second metallization layer ( 44 ) to form the third capacitor film ( 50 ).
1. A method for fabrication of a capacitor, comprising the following sequence of steps:
applying a polysilicide layer to form a first capacitor film, wherein said polysilicide layer is applied to an oxide-nitride-oxide layer sequence arranged on a lower polysilicide layer;
applying a first dielectric;
applying a first metallization layer to form a second capacitor film;
applying a second dielectric; and
applying a second metallization layer to form a third capacitor film.
2. The method as set forth in claim 1 , further comprising the step of patterning said polysilicide layer and said lower polysilicide layer so that said lower polysilicide layer protrudes laterally beyond said polysilicide layer.
3. A method for fabrication of a capacitor, comprising the following sequence of steps:
applying a polysilicide layer to form a first capacitor film;
applying a first dielectric;
applying a first metallization layer to form a second capacitor film;
applying a second dielectric;
applying a second metallization layer to form a third capacitor film; and
after application of said first metallization layer:
applying a pre-metal dielectric; and
planarizing said pre-metal dielectric to re-expose said first metallization layer.
4. A method for fabrication of a capacitor, comprising the following sequence of steps:
applying a polysilicide layer to form a first capacitor film;
applying a first dielectric;
applying a first metallization layer to form a second capacitor film;
applying a second dielectric;
applying a second metallization layer to form a third capacitor film; and
applying an etchable stop layer, for chemical-mechanical polishing, to said first dielectric.