Semiconductor device and manufacturing method of the same
View Patent ↗Disclosed is a method of manufacturing a semiconductor device, including the steps of: forming on a second insulating film a first resist pattern having a first window; employing the first resist pattern as an etching mask to form first openings exposed from contact regions CR; forming, on a second conductive film, a second resist pattern having first resist portions; employing the second resist pattern as an etching mask to form first and second conductors, a floating gate and a control gate; forming a third resist pattern in regions I, II and III; and employing the third resist pattern as an etching mask to remove the portions of the second conductors under second windows.
1. A semiconductor device comprising:
a semiconductor substrate;
a first conductor, formed in a first region of the semiconductor substrate with a first insulating film therebetween;
a second insulating film, formed on the first conductor and having a first opening in a contact region of the first conductor;
a flash memory, formed by sequentially laminating, on a second region of the semiconductor substrate, a tunnel insulating film made of the same material as the first insulating film, a floating gate made of the same material as the first conductor, an intermediate insulating film made of the same material as the second insulating film, and a control gate;
an inter-layer insulating film having a hole in the contact region of the first conductor; and
a conductive plug formed in the hole and electrically connected to the contact region of the first conductor.
2. The semiconductor device according to claim 1 , wherein the second insulating film is an ONO film.
3. The semiconductor device according to claim 1 , further comprising:
a first insulating side wall, formed on a side surface of the first conductor, that is taller than the upper surface of the first conductor; and
a second insulating side wall, formed on the second insulating film beside the first insulating side wall, having a curved surface retracted from the first opening of the second insulating film.
4. The semiconductor device according to claim 1 , further comprising:
a third insulating film formed on the first conductor in the first opening; and
a second conductor made of the same material as the control gate and formed on the first and third insulating films, and having a second opening on the contact region,
wherein a third opening is formed in the third insulating film on the contact region.
5. The semiconductor device according to claim 4 , wherein the second conductor is electrically floating.
6. The semiconductor device according to claim 4 , wherein the second conductor is made of polysilicon.
7. The semiconductor device according to claim 1 , wherein the first conductor is a first gate electrode, and the first insulating film under the first conductor functions as a first gate insulating film.
8. The semiconductor device according to claim 7 , further comprising:
a device isolation insulating film formed in the first region of the silicon substrate,
wherein the first gate electrode includes a gate, and pad extending on the device isolation insulating film, and
wherein the contact region is located on the pad.
9. The semiconductor device according to claim 1 , wherein the first gate electrode is made of polysilicon.
10. The semiconductor device according to claim 1 , wherein a second gate electrode is formed in a third region of the semiconductor substrate, with a second gate insulating film interposed between the second gate electrode and the semiconductor substrate.