Nanowire device and method of making the same

1. A nanowire device, comprising:

a nanowire formed between two surfaces;

a gap formed at a predetermined location in the nanowire; and

a protective layer established on each surface of the nanowire without being established on ends of the nanowire adjacent to the gap or adjacent to the two surfaces.

2. The nanowire device as defined in claim 1 , further comprising a predetermined material formed in at least a portion of the gap.

3. The nanowire device as defined in claim 1 , wherein the predetermined material is selected from a material having a changeable conductance, molecules, coated nanoparticles, oxides, metals, one-dimensional quantum structures, colloidal spheres, and combinations thereof.

4. The nanowire device as defined in claim 1 wherein the gap has a substantially controllable predetermined length.

5. The nanowire device as defined in claim 4 wherein the substantially controllable predetermined length is of a substantially similar order as a diameter of the nanowire.

6. The nanowire device as defined in claim 2 wherein the predetermined material is chemically positioned in the at least a portion of the gap, electrically positioned in the at least a portion of the gap, or combinations thereof.

7. The nanowire device as defined in claim 6 wherein the predetermined material is asymmetrically positioned in the gap.

8. The nanowire device as defined in claim 1 wherein the nanowire is positioned laterally or vertically between the two surfaces.

9. The nanowire device as defined in claim 1 wherein each surface is a surface of an electrode.

10. The nanowire device as defined in claim 1 wherein the nanowire includes two segments separated by the gap, wherein at least one of the two segments has a tapered diameter, and wherein a portion, with a larger diameter, of the at least one of the two segments is adjacent the respective surface.

11. A method of forming a nanowire device, the method comprising:

establishing a nanowire having a selectively removable segment between two surfaces;

removing the selectively removable segment, thereby forming a gap in the nanowire; and

establishing a protective layer on each surface of the nanowire without being established on ends of the nanowire adjacent to the gap or adjacent to the two surfaces.

12. The method as defined in claim 11 , further comprising introducing a predetermined material in the gap.

13. The method as defined in claim 12 wherein introducing the predetermined material in the gap is accomplished by introducing a fluid of, or containing a predetermined material into the gap, whereby the predetermined material adheres to at least one segment of the nanowire.

14. The method as defined in claim 13 , further comprising positioning the predetermined material in the gap by selecting a predetermined material having an affinity for the at least one segment of the nanowire or by selecting a segment material having an affinity for the predetermined material.

15. The method as defined in claim 13 wherein the predetermined material has a dipole, and wherein the method further comprises positioning or orienting the predetermined material or electrical properties thereof in the gap by applying an electric field to the device as the fluid of the predetermined material is introduced.

16. The method as defined in claim 11 wherein establishing the nanowire is accomplished by:

growing a first segment of the nanowire from one of the two surfaces;

growing the selectively removable segment from the first segment; and

growing a second segment of the nanowire from the selectively removable segment.

17. The method as defined in claim 16 wherein the selectively removable segment has an etch rate that is different from an etch rate of each of the first and second segments.

18. The method as defined in claim 16 wherein growing the selectively removable segment includes changing a material or changing a dopant concentration after the first segment is grown.

19. A method of using the device of claim 2 , the method comprising:

exposing the predetermined material to a predetermined condition, thereby causing a change in a property of the predetermined material; and

measuring the change in the property.

20. The method as defined in claim 19 wherein the predetermined condition is selected from heat, voltage, light and combinations thereof, and wherein the property is selected from an electrical property, an optical property, and combinations thereof.