Semiconductor apparatus with electrostatic protective device
View Patent ↗A semiconductor apparatus includes an electrostatic protective device having PN junction with N-type Si and P-type SiGe. The electrostatic protective device is directly connected with a terminal to receive static electricity and with a terminal to discharge static electricity.
1. A semiconductor apparatus comprising:
an electrostatic protective device having a PN junction of N-type Si and P-type SiGe,
wherein the electrostatic protective device is directly connected with a terminal to receive static electricity and with a terminal to discharge static electricity, and
wherein a region of the P-type SiGe contains carbon (C).
2. The semiconductor apparatus according to claim 1 , wherein
the electrostatic protective device is a SiGe bipolar transistor, and
an emitter or a collector of the SiGe bipolar transistor is the N-type Si, and a base of the SiGe bipolar transistor is the P-type SiGe.
3. The semiconductor apparatus according to claim 1 , wherein
the electrostatic protective device is a PN junction diode of N-type Si and P-type SiGe.
4. The semiconductor apparatus according to claim 1 , wherein
the electrostatic protective device is composed of a plurality of PN junctions of the N-type Si and the P-type SiGe connected in series.
5. A semiconductor apparatus comprising:
an electrostatic protective device having a PN junction of N-type Si and P-type SiGe,
wherein the electrostatic protective device is directly connected with a terminal to receive static electricity and with a terminal to discharge static electricity, and
wherein the electrostatic protective device is a SiGe bipolar transistor, and an emitter or a collector of the SiGe bipolar transistor is the N-type Si, and a base of the SiGe bipolar transistor is the P-type SiGe.
6. The semiconductor apparatus according to claim 5 , wherein
the emitter of the N-type Si and the base short-circuited with the collector of the SiGe bipolar transistor are directly connected with a terminal to receive static electricity and with a terminal to discharge static electricity.
7. The semiconductor apparatus according to claim 5 , wherein
the collector of the N-type Si and the base short-circuited with the emitter of SiGe bipolar transistor are directly connected with a terminal to receive static electricity and with a terminal to discharge static electricity.
8. The semiconductor apparatus according to claim 5 , wherein
the SiGe bipolar transistor has an emitter and a collector of the N-type Si, and
the emitter is directly connected with a terminal to receive static electricity, and the base is directly connected with a terminal to discharge static electricity, and the collector is directly connected with a second terminal to discharge static electricity.
9. A semiconductor apparatus comprising:
an electrostatic protective device having a PN junction of N-type Si and P-type SiGe,
wherein the electrostatic protective device is directly connected with a terminal to receive static electricity and with a terminal to discharge static electricity, and
wherein the electrostatic protective device is a PN junction diode of N-type Si and P-type SiGe.
10. A semiconductor apparatus comprising:
an electrostatic protective device having a PN junction of N-type Si and P-type SiGe,
wherein the electrostatic protective device is directly connected with a terminal to receive static electricity and with a terminal to discharge static electricity, and
wherein the electrostatic protective device is composed of a plurality of PN junctions of the N-type Si and the P-type SiGe connected in series.