Nano imprint master and method of manufacturing the same
View Patent ↗A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.
1. A method of manufacturing a nano imprint master, the method comprising:
epitaxially forming silicon oxide or silicon nitride on a substrate comprising quartz to form a silicon oxide layer or a silicon nitride layer, respectively;
implanting conductive metal ions into the silicon oxide layer or the silicon nitride layer to form a conductive layer inside the silicon oxide layer or the silicon nitride layer, respectively;
coating a resist on the silicon oxide layer or the silicon nitride layer to form a resist coating layer;
exposing the resist coating layer to an electron beam to form micropatterns;
etching the quartz substrate in which the silicon oxide layer or the silicon nitride layer is formed, by using the resist coating layer, in which the micropatterns are formed, as a mask; and
removing the resist coating layer to obtain a master in which micropatterns are formed.
2. The method of claim 1 , wherein the conductive layer is formed to a thickness of less than a skin depth.
3. The method of claim 1 , wherein the conductive metal ions comprise at least one of chromium ions, titanium ions, silver ions, metal ions, aluminum ions and platinum ions.
4. The method of claim 1 , wherein the etching of the quartz substrate comprises etching the quartz substrate by dry etching.
5. A method of manufacturing a nano imprint master, the method comprising:
forming a polymer layer on a substrate;
implanting conductive metal ions into the polymer layer to form a conductive layer inside the polymer layer;
coating a resist on the polymer layer in which the conductive layer is formed, to form a resist coating layer;
exposing the resist coating layer to an electron beam to form micropatterns;
etching the polymer layer by using the resist coating layer, in which the micropatterns are formed, as a mask; and
removing the resist coating layer to obtain a master in which micropatterns are formed on the polymer layer.
6. The method of claim 5 , wherein the etching of the polymer layer comprises etching the polymer layer by dry etching.
7. The method of claim 5 , further comprising forming an antisticking layer on the polymer layer in which the micropatterns are formed.
8. The method of claim 5 , wherein the conductive layer is formed to a thickness of less than a skin depth.
9. The method of claim 5 , wherein the conductive metal ions comprise at least one of chromium ions, titanium ions, silver ions, gold ions, and platinum ions.
10. The method of claim 5 , wherein the substrate comprises quartz.
11. The method of claim 5 , wherein the polymer layer comprises a high elastic polymer.
12. A method of manufacturing a nano imprint master, the method comprising:
forming a polymer layer on a substrate;
forming a silicon oxide layer or a silicon nitride layer on the polymer layer;
implanting conductive metal ions into the silicon oxide layer or the silicon nitride layer to form a conductive layer inside the silicon oxide layer or the silicon nitride layer, respectively;
coating a resist on the silicon oxide layer or the silicon nitride layer to form a resist coating layer;
exposing the resist coating layer to an electron beam to form micropatterns;
etching the silicon oxide layer or the silicon nitride layer by using the resist coating layer, in which the micropatterns are formed, as a mask; and
removing the resist coating layer to obtain a master in which micropatterns are formed in the silicon oxide layer or the silicon nitride layer.
13. The method of claim 12 , wherein the etching of the silicon oxide layer or the silicon nitride layer comprises etching the silicon oxide layer or the silicon nitride layer by dry etching.
14. The method of claim 12 , wherein the conductive layer is formed to a thickness of less than a skin depth.
15. The method of claim 12 , wherein the conductive metal ions comprise at least one of chromium ions, titanium ions, silver ions, gold ions, and platinum ions.
16. The method of claim 12 , further comprising forming an antisticking layer on the silicon oxide layer or the silicon nitride layer in which the micropatterns are formed.
17. The method of claim 12 , wherein the substrate comprises quartz.
18. The method of claim 12 , wherein the polymer layer comprises a high elastic polymer.