Solid state imaging device
View Patent ↗A solid-state imaging device includes a semiconductor substrate, photodetector elements, and blocking layers. The solid-state imaging device receives light on the back surface, and photoelectrically converts light incident upon the back surface of the semiconductor substrate, thereby acquiring an image of an object to be imaged. The photodetector elements receive the signal charge generated through the photoelectric conversion. Between a region in the semiconductor substrate where the photodetector elements are provided and the back surface, the blocking layers are provided. The blocking layers suppress diffusion of the signal charge.
1. A solid-state imaging device for photoelectrically converting light incident upon a back surface of a semiconductor substrate, thereby acquiring an image of an object to be imaged, comprising:
a photodetector element receiving a signal charge generated through said photoelectric conversion, provided in said semiconductor substrate; and
a blocking layer suppressing diffusion of said signal charge, provided between a region in said semiconductor substrate where said photodetector element is provided and said back surface.
2. The solid-state imaging device according to claim 1 , further comprising:
a plurality of photodetector elements provided at a predetermined interval;
wherein said blocking layer is located in said interval between said plurality of photodetector elements, in a plan view.
3. The solid-state imaging device according to claim 1 , wherein said blocking layer is an insulating layer.
4. The solid-state imaging device according to claim 1 , wherein said blocking layer extends from said back surface into an inner part of said semiconductor substrate.
5. The solid-state imaging device according to claim 1 , wherein said blocking layer extends from an upper surface of said semiconductor substrate opposite to said back surface, into an inner part of said semiconductor substrate.
6. The solid-state imaging device according to claim 1 , wherein said blocking layer is disposed so as to penetrate through said semiconductor substrate.