IP Library Granted Patent US 7,432,187
Granted Patent B1
US 7,432,187 · App. 11/748,150 · Granted Oct 7, 2008

Method for improving current distribution of a transparent electrode

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Quick Facts
Patent No.
US 7,432,187
App. No.
11/748,150
Granted
Oct 7, 2008
Kind
B1
Abstract

A method for improving current distribution of a transparent electrode includes forming a transparent electrode over a substrate; and forming a first mask. First openings are formed in the first mask. The first mask is also located over the transparent electrode. A dispersion, including conductive precursor components, is formed and deposited over the first mask and through the first openings onto the transparent electrode. Upon removal of the first mask, the conductive precursor components of the dispersion are cured to form first patterned conductive areas having a first thickness on the transparent electrode.

Claims (38)

1. A method for improving current distribution of a transparent electrode, comprising the steps of:

a) forming a transparent electrode over a substrate;

b1) forming a first mask;

b2) forming a plurality of first openings in the first mask;

c) locating the first mask over the transparent electrode;

d) forming a dispersion including conductive precursor components;

e) depositing the dispersion over the first mask and through the first openings onto the transparent electrode;

f) removing the first mask; and

g) curing the conductive precursor components of the dispersion to form first patterned conductive areas having a first thickness on the transparent electrode.

2. The method of claim 1 , further comprising the steps of:

h) locating a second mask over the transparent electrode to expose second openings over the transparent electrode differently located than the first openings;

i) depositing the dispersion over the second mask and through the second openings onto the transparent electrode;

j) removing the second mask; and

k) curing the dispersion to form second patterned conductive areas on the transparent electrode.

3. The method of claim 1 , further comprising the steps of:

h) re-positioning the first mask over the transparent electrode;

i) depositing the dispersion over the first mask and through the first openings onto the transparent electrode;

j) removing the first mask; and

k) curing the dispersion to form a third patterned conductive areas on the transparent electrode.

4. The method of claim 1 , further comprising the steps of:

h) depositing the dispersion again over the first mask and through the first openings onto the transparent electrode; and

i) curing the dispersion to form first patterned conductive areas on the transparent electrode having a second thickness greater than the first thickness.

5. The method of claim 1 , wherein the dispersion is deposited over the first mask.

6. The method of claim 1 , wherein the dispersion is deposited over the first openings and environs of the first openings.

7. The method of claim 1 , wherein the dispersion is deposited using hopper, slide, inkjet, or spray deposition.

8. The method of claim 1 , further comprising the steps of forming an additional electrode and a light-emissive layer between the additional electrode and the transparent electrode.

9. The method of claim 8 , wherein the light-emissive layer comprises inorganic materials.

10. The method of claim 9 , wherein the inorganic materials include core/shell quantum dots in a polycrystalline semiconductor matrix.

11. The method of claim 8 , wherein the light-emissive layer comprises organic materials.

12. The method of claim 1 , wherein the dispersion is cured by exposure to heat or light.

13. The method of claim 1 , wherein the dispersion is cured by pattern-wise exposure to a laser beam.

14. The method of claim 1 , wherein the dispersion is cured by exposure to an unpatterned beam of light.

15. The method of claim 1 , wherein the dispersion is repetitively deposited through the first mask.

16. The method of claim 1 , wherein the mask is a metal mask or a polymer mask.

17. The method of claim 1 , wherein the openings in the first mask are formed after locating the mask over the transparent electrode.

18. The method of claim 1 , wherein the dispersion is cured in the openings before the first mask is removed.

19. The method of claim 1 , wherein the openings in the mask are patterned by ablating or melting portions of the mask with laser light.

20. The method of claim 1 , wherein the precursor components of the dispersion include nanoparticles of a conductive material.

Assignments (8)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2010
From: EASTMAN KODAK COMPANY
To: GLOBAL OLED TECHNOLOGY LLC
Reel/Frame 023998/0368 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2007
From: COK, RONALD S.
To: EASTMAN KODAK COMPANY
Reel/Frame 019289/0378 →