Epitaxial regrowth in a distributed feedback laser
View Patent ↗Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms, increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius, growing a second portion of the regrowth layer at the increased substrate temperature, doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8.00*10^17/cm3 at the increased substrate temperature, and doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 1.90*10^18/cm3 and approximately 2.00*10^18/cm3 at the increased substrate temperature.
1. A method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser, the method comprising:
growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms;
increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius;
growing a second portion of the regrowth layer at the increased substrate temperature; doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8.00*10A17/cm3 at the increased substrate temperature; and
doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 1.90*10A18/cm3 and approximately 2.00*10A18/cm3 at the increased substrate temperature.
2. The method as recited in claim 1 , wherein doping the regrowth layer at a concentration of approximately 8.00*10A17/cm3 at the increased substrate temperature comprises doping the regrowth layer at a concentration of approximately 8.00*10A17/cm3 at the increased substrate temperature to a thickness of approximately 0.5 um.
3. The method as recited in claim 1 , wherein increasing the substrate temperature to approximately 660 degrees Celsius comprises increasing the substrate temperature to approximately 660 degrees Celsius with a linear temperature ramp profile.
4. The method as recited in claim 3 , wherein increasing the substrate temperature to approximately 660 degrees Celsius with a linear temperature ramp profile comprises growing a third portion of the regrowth layer while increasing the substrate temperature to approximately 660 degrees Celsius with a linear temperature ramp profile.
5. The method as recited in claim 4 , wherein growing a third portion of the regrowth layer comprises growing a third portion of the regrowth layer with a quadratic doping ramp profile.
6. The method as recited in claim 4 , wherein growing a third portion of the regrowth layer comprises growing a third portion of the regrowth layer with a linear doping ramp profile.
7. The method as recited in claim 1 , further comprising: growing a contact layer atop the regrowth layer; and doping the contact layer.
8. The method as recited in claim 7 , wherein doping the contact layer comprises doping the contact layer at a concentration of about 1.10*10^19/cm3.
9. The method as recited in claim 7 , wherein doping the contact layer comprises doping the contact layer at a concentration of about 1.60*10^19/cm3.
10. The method as recited in claim 7 , wherein the contact layer is grown to a thickness of approximately 200 nm.
11. The method as recited in claim 7 , further comprising:
depositing a cap layer atop the contact layer; and
doping the cap layer.
12. The method as recited in claim 11 , wherein the cap layer is grown to a thickness of approximately 200 nm and wherein doping the cap layer comprises doping the cap layer at a concentration of about 2.00*10^18/cm3.
13. The method as recited in claim 11 , further comprising cooling the distributed feedback laser to a temperature of approximately 300 degrees Celsius.
14. The method as recited in claim 1 , wherein the InP regrowth layer is deposited so as to substantially fill period gaps defined in a grating layer of the distributed feedback laser.
15. A method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser, the method comprising:
growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness of approximately 300 Angstroms;
increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius;
growing a second portion of the regrowth layer at the increased substrate temperature;
doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8.00*10^17/cm3 at the increased substrate temperature; and
doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 1.90*10^18/cm3 and approximately 2.00*10^18/cm3 at the increased substrate temperature.
16. The method as recited in claim 15 , wherein increasing the substrate temperature to approximately 660 degrees Celsius comprises growing a third portion of the regrowth layer with a quadratic doping ramp profile while increasing the substrate temperature to approximately 660 degrees Celsius with a linear temperature ramp profile.
17. The method as recited in claim 15 , further comprising:
growing a contact layer atop the regrowth layer; and
doping the contact layer at a concentration of about 1.10*10^19/cm3.