Semiconductor laser having a doped active layer
View Patent ↗Semiconductor lasers having a doped active region. In one example embodiment, a laser includes a substrate and a doped active region positioned above the substrate. The doped active region includes a plurality of quantum wells separated by a plurality of barrier layers. The quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm3 to about 1*10^17/cm3.
1. A DFB laser, comprising:
a substrate;
a mode modifier layer positioned above the substrate;
a buffer layer positioned above the mode modifier layer;
a first confinement layer positioned above the buffer layer;
a second confinement layer positioned above the first confinement layer;
a doped active region positioned above the second confinement layer, the doped active region comprising:
a plurality of quantum wells separated by a plurality of barrier layers, wherein the quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm 3 to about 1*10^17/cm 3 ;
a third confinement layer positioned above the doped active region;
a fourth confinement layer positioned above the third confinement layer;
a first spacer layer positioned above the fourth confinement layer;
an etch stop layer positioned above the first spacer layer;
a second spacer layer positioned above the etch stop layer;
a grating layer positioned above the second spacer layer; and
a top layer positioned above the grating layer.
2. The laser as recited in claim 1 , wherein the substrate is a p-type substrate and the doping material is an n-type doping material.
3. The laser as recited in claim 1 , wherein the substrate is an n-type substrate and the doping material is a p-type doping material.
4. The laser as recited in claim 1 , wherein the doping material comprises beryllium.
5. The laser as recited in claim 1 , wherein the doping material comprises carbon.
6. The laser as recited in claim 1 , wherein the doping material comprises zinc.
7. The laser as recited in claim 6 , wherein the quantum wells and the barrier layers are doped with a doping material with a concentration of about 5*10^16/cm 3 .
8. The laser as recited in claim 1 , further wherein:
the substrate, the mode modifier layer, the first confinement layer, and the second confinement layer are n-type layers;
the third confinement layer, the fourth confinement layer, the first spacer layer, the etch stop layer, the second spacer layer, and the grating layer are p-type layers; and
the doping material is a p-type material.
9. The laser as recited in claim 1 , further wherein:
the substrate, the mode modifier layer, the first confinement layer, and the second confinement layer are p-type layers; and
the third confinement layer, the fourth confinement layer, the first spacer layer, the etch stop layer, the second spacer layer, and the grating layer are n-type layers; and
the doping material is an n-type material.
10. A TOSA comprising:
a housing; and
the laser as recited in claim 1 positioned within the housing.
11. An optical transceiver module comprising:
the TOSA as recited in claim 10 ;
a ROSA; and
a PCB in electrical communication with the TOSA and the ROSA.
12. A DFB laser, comprising:
an n-type substrate;
an n-type mode modifier layer positioned above the n-type substrate;
a buffer layer positioned above the n-type mode modifier layer;
a first n-type confinement layer positioned above the buffer layer;
a second n-type confinement layer positioned above the n-type first confinement layer;
a doped active region positioned above the second n-type confinement layer, the doped active region comprising:
a plurality of quantum wells separated by a plurality of barrier layers, wherein the quantum wells and the barrier layers are doped with a p-type zinc material with a concentration between about 1*10^16/cm 3 to about 5*10^16/cm 3 ;
a first p-type confinement layer positioned above the doped active region;
a second p-type confinement layer positioned above the first p-type confinement layer;
a first p-type spacer layer positioned above the second p-type confinement layer;
a p-type etch stop layer positioned above the first p-type spacer layer;
a second p-type spacer layer positioned above the p-type etch stop layer;
a p-type grating layer positioned above the second p-type spacer layer; and
a top layer positioned above the p-type grating layer.
13. The DFB laser as recited in claim 12 , wherein the doping material has a concentration of about 5*10^16/cm3.
14. The DFB laser as recited in claim 12 , wherein the DFB laser is configured to operate at 10 Gbit.
15. A TOSA comprising:
a housing; and
the DFB laser as recited in claim 12 positioned within the housing.
16. An optical transceiver module comprising:
the TOSA as recited in claim 15 ;
a ROSA; and
a PCB in electrical communication with the TOSA and the ROSA.
17. A DFB laser, comprising:
a substrate;
a mode modifier layer positioned above the substrate;
a buffer layer positioned above the mode modifier layer;
a doped active region positioned above the buffer layer, the doped active region comprising:
a plurality of quantum wells separated by a plurality of barrier layers, wherein the quantum wells and the barrier layers are doped with a doping material,
wherein an emission wavelength of the DFB laser is about 1310 nm or greater.
18. The DFB laser of claim 17 , wherein the mode modifier is associated with a coupling of second-order transverse modes away from the active region of the DFB laser.
19. The DFB laser of claim 17 , wherein a concentration of the doping material is between about 1*10^16/cm 3 to about 1*10^17/cm 3 .
20. An optoelectronic transceiver having a TOSA that includes the DFB laser of claim 17 .