CDM ESD PROTECTION FOR INTEGRATED CIRCUITS
The present invention provides a charged-device model (CDM) electrostatic discharge (ESD) protection circuit for an integrated circuit (IC). The ESD protection circuit comprises a substrate of first conductivity type; a MOS component of second conductivity type formed on a first well on the substrate, and coupled to a pad; an isolating well/region having the second conductivity type being formed between the first well and the substrate to separate the first well and the substrate. Additionally, the circuit comprises an ESD clamp coupled to the isolated well/region. Under normal power operation, the ESD clamp is open. During a CDM ESD event, the CDM charges accumulated in the substrate and the MOS component are removed by the ESD clamp to prevent damage to the IC.
1 . A circuit having charged-device model (CDM) electrostatic discharge (ESD) protection comprising:
a substrate;
a semiconductor device isolated from the substrate;
an ESD clamp coupled to the device to discharge charges located in the device, wherein said clamp triggers upon voltage build up in the device.
2 . The circuit of claim 1 wherein the ESD clamp device comprise at least one of SCR, transistor, diode, resistor, capacitor, or inductor.
3 . The circuit of claim 1 wherein said semiconductor device comprise a MOSFET having source, drain and gate, wherein said gate is connected to a I/O pad external to the circuit.
4 . The circuit of claim 1 wherein said semiconductor device comprise a MOSFET having a source, drain and gate, wherein said gate is connected to an internal node.
5 . The circuit of claim 1 wherein said semiconductor device comprise a capacitance connected internally to the circuit.
6 . The circuit of claim 1 wherein said ESD clamp is coupled to a power supply.
7 . A circuit having charged-device model (CDM) electrostatic discharge (ESD) protection comprising:
a substrate of first conductivity type;
a first lightly doped region of second conductivity type formed within the substrate;
a second lightly doped region formed within the first lightly doped region, said second lightly doped region of the first conductivity type;
a semiconductor device formed in the second lightly doped region;
an ESD clamp coupled between the second lightly doped region and a reference node to discharge charges located in the device, wherein said clamp triggers upon voltage build up in the device.
8 . The circuit of claim 7 wherein the second lightly doped region is isolated from the substrate by the first lightly doped region.
9 . The circuit of claim 7 wherein charges accumulated in the second lightly doped region flow via the ESD clamp during a CDM event.
10 . The circuit of claim 7 wherein the device comprise at least one of transistor or capacitor.
11 . The circuit of claim 7 wherein the ESD clamp comprise at least one of SCR, transistor, diode, resistor, capacitor, or inductor.
12 . The circuit of claim 7 further comprising at least one power supply, wherein said reference node is one of the power supplies.
13 . The circuit of claim 7 wherein said semiconductor device comprise a MOSFET having source, drain and gate, wherein said gate is connected to a I/O pad external to the circuit.
14 . The circuit of claim 13 further comprising:
a first and second power supply, said reference node comprise one of the power supplies;
a first diode coupled between the I/O pad and the first power supply; and
a second diode coupled between the I/O pad and the second power supply.
15 . The circuit of claim 13 wherein the MOSFET is part of an input driver of the I/O pad.
16 . The circuit of claim 7 wherein said semiconductor device comprise a MOSFET having a source, drain and gate, wherein said gate is connected to an internal node.
17 . The circuit of claim 7 wherein said semiconductor device comprise a capacitance connected internally to the circuit.
18 . The circuit of claim 7 wherein the first conductivity type is an N type and the second conductivity type is a P type.
19 . The circuit of claim 7 wherein the first conductivity type is a P type and the second conductivity type is a N type.
20 . The circuit of claim 19 wherein the first lightly doped region is formed with a NWell region and with at least one of a Deep NWell region and buried layer