Thin film transistor, method of fabricating the same, and flat panel display using thin film transistor
View Patent ↗A thin film transistor may include an active layer formed on an insulating substrate and formed with source/drain regions and a channel region; a gate insulating film formed on the active layer; and a gate electrode formed on the gate insulating film. The gate electrode may be formed of a conductive metal film pattern and a conductive oxide film covering the conductive metal film pattern. The source/drain regions may include an LDD region, and the LDD region may at least partially overlap with the gate electrode.
1. A method of fabricating a thin film transistor, comprising:
forming an active layer on an insulating substrate;
forming a gate insulating film on the active layer;
forming a conductive film pattern on the gate insulating film;
doping on the active layer lightly;
after doping on the active layer lightly, oxidizing the conductive film pattern to form a conductive oxide film pattern covering an upper surface of the conductive film pattern;
doping the active layer highly using the conductive oxide film pattern as a mask,
wherein source/drain regions of the active layer have an LDD region, and the LDD region at least partially overlaps with a gate electrode.
2. The method of claim 1 , wherein the conductive film pattern comprises at least one of a group of Ti, Zn, In, and any alloy thereof.
3. The method of claim 1 , wherein the conductive oxide film is about 2 μm or less thick.
4. The method of claim 1 , wherein the conductive oxide film is about 1 μm or less thick.
5. The method of claim 1 , wherein the LDD region lies horizontally beneath the conductive oxide film.
6. The method of claim 1 , wherein the LDD region is narrower than a thickness of the conductive oxide film.
7. The method of claim 1 , wherein the LDD region is about 2 μm or less wide.
8. The method of claim 1 , wherein the LDD region is about 1 μm or less wide.
9. The method of claim 1 , wherein the conductive film pattern consists of one material.
10. The method of claim 1 , wherein the conductive film pattern consists of a single layer.
11. The method of claim 1 , wherein doping on the active layer lightly comprises using the conductive film pattern as a mask.