High side/low side driver device for switching electrical loads

1. An integrated circuit device for switching electrical loads that can have an inductive component in an automotive application, comprising at least one switch that includes a power stage with a power MOS transistor and a driver circuit for driving the gate of the power MOS transistor, the switch being configurable for use in either of a High Side configuration and a Low Side configuration wherein the power MOS transistor when in an OFF condition and in a High Side configuration has its source allowed to assume a voltage level sufficiently below substrate to ensure fast switching off by a drain-gate voltage clamp formed by a plurality of reverse-biased, series-connected base-emitter junctions of integrated npn structures, formed in an n-well connected to a higher potential so that a parasitic diode to the substrate is not forward-biased.

2. The integrated circuit device according to claim 1 , and comprising a plurality of similar switches each of which is configurable independent of all other switches.

3. The integrated circuit device according to claim 1 , wherein the power MOS transistor when in an OFF condition and in a High Side configuration has its source allowed to assume a voltage level sufficiently below substrate to ensure fast switching off.

4. The integrated circuit device according to claim 1 , wherein the power MOS transistor has its gate uncoupled from the driver circuit and does not have a parasitic diode to the substrate.

5. The integrated circuit device according to claim 4 , wherein the drain-gate voltage clamp is formed by a plurality of reverse-biased, series-connected base-emitter junctions of integrated npn structures.

6. The integrated circuit device according to claim 4 , and additionally including a gate-source voltage clamp associated with the power MOS transistor.

7. The integrated circuit device according to claim 1 , wherein the drive circuit in a High Side configuration is connected to a supply voltage of a level above a battery supply voltage to which the power MOS transistor is connected.

8. The integrated circuit device according to claim 7 , and including a charge pump that provides the supply voltage to the drive circuit.

9. The integrated circuit device according to claim 1 , wherein the driver circuit in a Low Side configuration is connected to a supply voltage of a level between ground and a battery voltage.

10. The integrated circuit device according to claim 1 , wherein the power MOS transistor is a Lateral Double Diffused MOS transistor.

11. The integrated circuit device according to claim 10 , wherein the power MOS transistor is of p-channel type.