Granted Patent B2

US 7,713,428 · App. 11/753,052 · Granted May 11, 2010

Abstract

Claims (15)

1. A process, comprising: a) providing a passive polymer layer having an inverted-rib, a first side clad and a second side clad separated by the inverted rib, and a side clad polymer layer overlying the passive polymer layer; b) using a plasma to dry-etch a trench into the side clad polymer layer using the passive polymer layer as an etch stop, thereby forming a third side clad and fourth side clad; and c) backfilling the trench with an electro-optic polymer by depositing an electro-optic polymer layer on the third side clad, the passive polymer layer, and the fourth side clad.

2. The process of claim 1 , further comprising: d) dry-etching the electro-optic polymer layer to form an electro-optic polymer channel, wherein the electro-optic polymer channel the third side clad, and the fourth side clad each have substantially the same thickness.

3. The process of claim 1 , wherein the passive polymer layer is an organically modified silicate, the side clad polymer layer is a crosslinked polymer, and the plasma comprises oxygen.

4. The process of claim 3 , wherein the plasma further comprises helium, neon, or argon.

5. The process of claim 4 , wherein the organically modified silicate comprises an acrylate group and a refractive index modifying group.

6. The process of claim 5 , wherein the first side clad, the second side, the third side clad, and the fourth side clad each independently comprises a crosslinked polymer.

7. The process of claim 6 , wherein the first side clad, the second side, the third side clad, and the fourth side clad each independently comprises a crosslinked acrylate comprising a poly(alkylene glycol).

8. The process of claim 7 , wherein the crosslinked acrylate polymer further comprises pentaerythritol.

9. A process, comprising: a) providing a first side clad polymer layer and a first electrode underlying the first side clad polymer layer; b) using a plasma to dry-etch a first trench into the first side clad polymer layer using the first electrode as an etch stop, thereby forming a first side clad and second side clad; c) backfilling the first trench with a passive polymer by depositing a passive polymer layer on the first side clad, the first electrode, and the second side clad, thereby forming an inverted rib between the first side clad and the second side clad, wherein the passive polymer layer has a substantially planar surface opposite the inverted rib; d) depositing a second side clad polymer layer on the passive polymer layer; e) using a plasma to dry-etch a second trench into the second side clad polymer layer using the passive polymer layer as an etch stop, thereby forming a third side clad and fourth side clad, wherein the second trench is aligned substantially vertically with the inverted rib; and f) backfilling the second trench with an electro-optic polymer by depositing an electro-optic polymer layer on the third side clad, the passive polymer layer, and the fourth side clad.

10. The process of claim 9 , wherein: the first side clad polymer layer has a thickness of about 1.5 microns; the passive polymer layer has a thickness of about 1.5 microns; and the second side clad polymer layer has a thickness of about 1.0 microns.

11. The process of claim 9 , further comprising: g) dry-etching the electro-optic polymer layer to form an electro-optic polymer channel, wherein the electro-optic polymer channel the third side clad, and the fourth side clad each have substantially the same thickness.

12. The process of claim 9 , wherein a second clad polymer layer underlies the first electrode.

13. The process of claim 12 , wherein the second clad polymer layer comprises an organically modified silicate.

14. The process of claim 13 , wherein the organically modified silicate comprising the second clad polymer layer comprises tin and antimony.

15. The process of claim 12 , wherein the second clad polymer layer comprises SiO x .

Assignments (10)