Wafer scanning antenna with integrated tunable dielectric phase shifters
View Patent ↗A wafer antenna comprises a wafer substrate, a plurality of antenna elements integrated on the wafer substrate for radiating and receiving a radio frequency signal, an electrical connection integrated on the wafer substrate; a feed network integrated on the wafer substrate for distributing the RF signal from the electrical connection to the antenna elements and from the antenna elements to the electrical connection, and a plurality of tunable dielectric phase shifters integrated on the wafer substrate with each of the tunable dielectric phase shifters coupled to a corresponding one of the antenna elements and controlling the phase of the RF signal coupled to the corresponding one of the antenna elements.
1. An antenna comprising:
a wafer substrate;
a plurality of antenna elements integrated on the wafer substrate for radiating or receiving a radio frequency (RF) signal;
an electrical connection integrated on the wafer substrate;
a feed network integrated on the wafer substrate for distributing the RF signal from the electrical connection to the antenna elements and from the antenna elements to the electrical connection;
a plurality of tunable dielectric phase shifters integrated on the wafer substrate with the feed network, each of the tunable dielectric phase shifters coupled to a corresponding one or more of the antenna elements and controlling a phase of the RF signal coupled to said corresponding one or more of the antenna elements and including a pair of coplanar striplines and one or more barium strontium titanate (BST) capacitors coupled between the pair of coplanar striplines; and
a balun circuit coupled between a microstrip line of one of the antenna elements and the coplanar striplines of one of the tunable dielectric phase shifters.
2. The antenna of claim 1 , wherein the tunable dielectric phase shifters include signal and ground connections on a same side of the wafer substrate on which the tunable dielectric phase shifters are integrated.
3. The antenna of claim 1 , wherein at least some of the BST capacitors are periodically disposed between the pair of coplanar striplines.
4. The antenna of claim 1 , wherein each of the BST capacitors comprises:
a pair of electrodes; and
a BST dielectric layer disposed between the pair of electrodes.
5. The antenna of claim 1 , wherein the wafer substrate comprises one selected from the group consisting of sapphire, alumina, glass, silicon, quartz, fused quartz, and gallium arsenide.
6. An antenna comprising:
a wafer substrate;
a plurality of antenna elements integrated on the wafer substrate for radiating or receiving a radio frequency (RF) signal;
an electrical connection integrated on the wafer substrate;
a feed network integrated on the wafer substrate for distributing the RF signal from the electrical connection to the antenna elements and from the antenna elements to the electrical connection;
a plurality of tunable dielectric phase shifters integrated on the wafer substrate with the feed network, each of the tunable dielectric phase shifters coupled to a corresponding one or more of the antenna elements to control a phase of the RF signal coupled to said corresponding one or more of the antenna elements and including:
a pair of coplanar striplines; and
one or more barium strontium titanate (BST) capacitors coupled between the pair of coplanar striplines, and wherein a phase shift induced by each of the tunable dielectric phase shifters is adjusted by controlling a DC (direct current) bias voltage applied to the one or more BST capacitors to adjust a radiation pattern of the antenna; and
a balun circuit coupled between a microstrip line of one of the antenna elements and the coplanar striplines of one of the tunable dielectric phase shifters.
7. The antenna of claim 6 , wherein the tunable dielectric phase shifters include signal and ground connections on a same side of the wafer substrate on which the tunable dielectric phase shifters are integrated.
8. The antenna of claim 6 , wherein the DC bias voltage is supplied to the BST capacitors through the antenna elements.
9. The antenna of claim 6 , wherein the DC bias voltage is controlled by a digital controller coupled to the antenna.
10. The antenna of claim 6 , wherein at least some of the BST capacitors are periodically disposed between the pair of coplanar striplines.
11. The antenna of claim 6 , wherein each of the BST capacitors comprises:
a pair of electrodes; and
a BST dielectric layer disposed between the pair of electrodes.
12. The antenna of claim 6 , wherein the wafer substrate comprises one selected from the group consisting of sapphire, alumina, glass, silicon, quartz, fused quartz, and gallium arsenide.
13. An antenna comprising:
a wafer substrate;
a plurality of antenna elements integrated on the wafer substrate, each of the antenna elements including a microstrip line for radiating or receiving a radio frequency (RF) signal;
an electrical connection integrated on the wafer substrate;
a feed network integrated on the wafer substrate for distributing the RF signal from the electrical connection to the antenna elements and from the antenna elements to the electrical connection;
a plurality of barium strontium titanate (BST) phase shifters integrated on the wafer substrate with the feed network, each of the BST phase shifters coupled to a corresponding one or more of the antenna elements and including:
a pair of coplanar striplines; and
one or more BST capacitors coupled between the pair of coplanar striplines, and wherein a phase shift induced by each of the BST phase shifters is adjusted by controlling a DC (direct current) bias voltage applied to the one or more BST capacitors to adjust a radiation pattern of the antenna; and
one or more balun circuits coupled between the microstrip line of each of the antenna elements and the coplanar striplines of each corresponding one of the BST phase shifters.
14. The antenna of claim 13 , wherein the BST phase shifters include signal and ground connections on a same side of the wafer substrate on which the BST phase shifters are integrated.
15. The antenna of claim 13 , wherein the DC bias voltage is supplied to the BST capacitors through the antenna elements.
16. The antenna of claim 13 , wherein a first DC bias voltage is applied to a first BST phase shifter coupled to a first antenna element and a second DC bias voltage different from the first DC bias voltage is applied to a second BST phase shifter coupled to a second antenna element.