Pattern decomposition method for double exposure
View Patent ↗A pattern decomposition method capable of achieving patterns with a complicated layout by double exposure. The pattern decomposition method for decomposing a target pattern which includes first patterns having repeated lines and spaces and second patterns disposed between the first patterns and having a predetermined size into patterns for first exposure and patterns for second exposure, comprises decomposing the first patterns into a pattern for first exposure and a pattern for second exposure, decomposing the second patterns into a pattern for first exposure and a pattern for second exposure, and respectively merging the pattern for first exposure or the pattern for second exposure of the first patterns with the pattern for first exposure or the pattern for second exposure of the second patterns.
1. A double exposure pattern decomposition method for decomposing a target pattern which includes first patterns having repeated lines and spaces and second patterns disposed between the first patterns and having a predetermined size into patterns for first exposure and patterns for second exposure, the method comprising:
a) decomposing the first patterns into a pattern for first exposure and a pattern for second exposure;
b) decomposing the second patterns into a pattern for first exposure and a pattern for second exposure; and
c) respectively merging the pattern for first exposure or the pattern for second exposure of the first patterns with the pattern for first exposure or the pattern for second exposure of the second patterns.
2. The pattern decomposition method according to claim 1 , comprising decomposing the first patterns into the pattern for first exposure and the pattern for second exposure in view of a wavelength of a light source used for exposure and a numerical aperture of an exposure system.
3. The pattern decomposition method according to claim 1 , comprising decomposing the first patterns into the pattern for first exposure and the pattern for second exposure such that a pitch between the pattern for first exposure and the pattern for second exposure is larger than a minimum pitch which can be achieved on a substrate with exposure conditions of a wavelength of a light source used for exposure and a numerical aperture of an exposure system.
4. The pattern decomposition method according to claim 1 , wherein the second patterns are sized such that two decomposed groups of patterns of the second patterns can be achieved on a substrate.
5. The pattern decomposition method according to claim 1 , comprising decomposing the second patterns into the pattern for first exposure and the pattern for second exposure in consideration of a wavelength of a light source used for exposure and a numerical aperture of an exposure system.
6. The pattern decomposition method according to claim 1 , comprising merging the pattern for first exposure of the first patterns with the pattern for first exposure of the second patterns; and merging the pattern for second exposure of the first patterns with the pattern for second exposure of the second patterns.
7. The pattern decomposition method according to claim 1 , comprising merging the pattern for first exposure of the first patterns with the pattern for second exposure of the second patterns; and merging the pattern for second exposure of the first patterns with the pattern for first exposure of the second patterns.