Bulk acoustic wave device with coupled resonators
View Patent ↗A bulk acoustic wave device includes first and second resonators, which are acoustically coupled and electrically connected in parallel.
1. A bulk acoustic wave device, comprising:
a first resonator and a second resonator, each of the first and second resonators comprising: a first electrode; a piezoelectric layer disposed over at least a portion of the first electrode; and a second electrode disposed over at least a portion of the piezoelectric layer, wherein the first and second resonators are acoustically coupled, and the first and second resonators are electrically connected in parallel; and
a coupling layer disposed between the first resonator and the second resonator, the coupling layer comprising a plurality of layers of alternating high and low acoustic impedances for acoustically coupling the first and second resonators, wherein the first electrode of the first resonator and the second electrode of the second resonator are connected, and the second electrode of the first resonator and the first electrode of the second resonator are connected.
2. The bulk acoustic wave device according to claim 1 , wherein the piezoelectric layer of the first resonator and the piezoelectric layer of the second resonator are oriented in a same direction or are oriented in opposite directions.
3. The bulk acoustic wave device according to claim 1 , wherein the first resonator and the second resonator comprise substantially same properties.
4. The bulk acoustic wave device according to claim 1 , further comprising a substrate comprising an acoustic mirror or a membrane region on which the first resonator and the second resonator are formed.
5. The bulk acoustic wave device according to claim 4 , wherein the substrate comprises an acoustic mirror, the acoustic mirror comprising a plurality of layers of alternating high and low acoustic impedances.
6. The bulk acoustic wave device according to claim 1 , wherein the first resonator and the second resonator are stacked.
7. A bulk acoustic wave device, comprising:
a stacked arrangement of a first BAW resonator and a second BAW resonator, the first and second BAW resonators each comprising a first electrode, a piezoelectric layer disposed at least partially over the first electrode, and a second electrode disposed over at least partially on the piezoelectric layer; and
a coupling layer between the first BAW resonator and the second BAW resonator, the coupling layer comprising a plurality of layers of alternating high and low acoustic impedances for acoustically coupling the first and second BAW resonators,
wherein the first electrode of the first BAW resonator and the second electrode of the second BAW resonator are connected,
wherein the second electrode of the first BAW resonator and the first electrode of the second BAW resonator are connected, and
wherein the piezoelectric layer of the first BAW resonator and the piezoelectric layer of the second BAW resonator are oriented in a same direction or are oriented in opposite directions.
8. The bulk acoustic wave device according to claim 7 , further comprising a substrate comprising an acoustic mirror or a membrane region on which the first BAW resonator and the second BAW resonator are formed, the acoustic mirror comprising a plurality of layers of alternating high and low acoustic impedances.
9. A bulk acoustic wave device, comprising:
a stacked arrangement of a first BAW resonator and a second BAW resonator, the first and second BAW resonators each comprising a first electrode, a piezoelectric layer disposed over at least a portion of the first electrode, and a second electrode disposed over at least a portion of the piezoelectric layer; and
a coupling layer between the first BAW resonator and the second BAW resonator, the coupling layer comprising a plurality of layers of alternating high and low acoustic impedances for acoustically coupling the first and second BAW resonators,
wherein the first electrode of the first BAW resonator and the first electrode of the second BAW resonator are connected,
wherein the second electrode of the first BAW resonator and the second electrode of the second BAW resonator are connected, and
wherein the piezoelectric layer of the first BAW resonator and the piezoelectric layer of the second BAW resonator are oriented in a same direction or are oriented in opposite directions.
10. The bulk acoustic wave device according to claim 9 , further comprising a substrate comprising an acoustic mirror or a membrane region on which the first BAW resonator and the second BAW resonator are formed, the acoustic mirror comprising a plurality of layers of alternating high and low acoustic impedances.
11. A filter, comprising:
a first stage; and
a second stage,
wherein at least one of the first stage and the second stage comprises a bulk acoustic wave device, the bulk acoustic wave device comprising:
a first resonator and a second resonator, each of the first and second resonators comprising: a first electrode; a piezoelectric layer disposed over at least a portion of the first electrode; and a second electrode disposed over at least a portion of the piezoelectric layer,
wherein the first and second resonators are acoustically coupled, and the first and second resonators are electrically connected in parallel; and
a coupling layer disposed between the first resonator and the second resonator, the coupling layer comprising a plurality of layers of alternating high and low acoustic impedances for acoustically coupling the first and second BAW resonators, wherein the first electrode of the first resonator and the second electrode of the second resonator are connected, and the second electrode of the first resonator and the first electrode of the second resonator are connected.
12. The filter of claim 11 , wherein the piezoelectric layer of the first resonator and the piezoelectric layer of the second resonator are oriented in a same direction or are oriented in opposite directions.
13. The filter according to claim 11 , wherein the first resonator and the second resonator comprise substantially same properties.
14. The filter according to claim 11 , further comprising a substrate supporting the first stage and the second stage, wherein the substrate comprises an acoustic mirror or a membrane region on which the first resonator and the second resonator are formed, the acoustic mirror comprising a plurality of layers of alternating high and low acoustic impedances.
15. The filter according to claim 11 , wherein the first resonator and the second resonator are stacked.
16. The filter according to claim 11 , further comprising a coupling layer between the first resonator and the second resonator, wherein the coupling layer comprises one or more layers of alternating high and low acoustic impedances for acoustically coupling the first and second resonators.
17. The filter of claim 11 , wherein the first stage comprises a coupled resonator filter, and wherein the second stage comprises a bulk acoustic wave device, the bulk acoustic wave device comprising:
a first resonator; and
a second resonator,
wherein the first and second resonators are acoustically coupled, and
wherein the first and second resonators are electrically connected in parallel.
18. The filter of claim 11 , wherein the second stage comprises a series stage comprising the bulk acoustic wave device and a shunt stage comprising a further bulk acoustic wave device, the further bulk acoustic wave device comprising:
a first resonator; and
a second resonator,
wherein the first and second resonators are acoustically coupled, and
wherein the first and second resonators are electrically connected in parallel.
19. The filter of claim 18 , wherein the first stage comprises a coupled resonator filter.
20. The filter of claim 19 , wherein the coupled resonator filter comprises a first resonator and a second resonator, wherein the first and second resonators are acoustically coupled.
21. The filter of claim 20 , comprising:
a first port and a second port,
wherein a first electrode of the first resonator of the coupled resonator filter is connected to a first terminal of the first port, and a second electrode of the first resonator of the coupled resonator filter is connected to a second terminal of the first port,
wherein a first electrode of the second resonator of the coupled resonator filter is connected to a second electrode of the first resonator and to a first electrode of the second resonator of the further bulk acoustic wave device, and a second electrode of the second resonator of the coupled resonator filter is connected to a first electrode of the first resonator and to a second electrode of the second resonator of the further bulk acoustic wave device,
wherein the first electrode of the first resonator of the further bulk acoustic wave device is connected to a first electrode of the first resonator of the bulk acoustic wave device, and the second electrode of the second resonator of the further bulk acoustic wave device is connected to a second electrode of the second resonator of the bulk acoustic wave device,
wherein the second electrode of the first resonator and the first electrode of the second resonator of the bulk acoustic wave device are connected to a first terminal of the second port, and
wherein the second electrode of the first resonator and the first electrode of the second resonator of the further bulk acoustic wave device are connected to a second terminal of the second port.
22. A filter, comprising:
a series connection of a coupled resonator filter and a bulk acoustic wave device; and
a shunt stage comprising a further bulk acoustic wave device, the shunt stage being coupled to the series connection,
wherein the coupled resonator filter comprises a first resonator, a second resonator and a coupling layer disposed between the first and second resonators, the coupling layer comprising a plurality of layers of alternating high and low acoustic impedances for acoustically coupling the first and second BAW resonators, wherein the first and second resonators are coupled, and
wherein each of the bulk acoustic wave device and the further bulk acoustic wave device comprises:
a first resonator; and
a second resonator,
wherein the first and second resonators of the further bulk acoustic wave device are coupled, and
wherein the first and second resonators of the further bulk acoustic wave device are electrically connected in parallel.
23. The filter of claim 22 , comprising:
a first port and a second port,
wherein a first electrode of the first resonator of the coupled resonator filter is connected to a first terminal of the first port, and a second electrode of the first resonator of the coupled resonator filter is connected to a second terminal of the first port,
wherein a first electrode of the second resonator of the coupled resonator filter is connected to a second electrode of the first resonator and to a first electrode of the second resonator of the further bulk acoustic wave device, and a second electrode of the second resonator of the coupled resonator filter is connected to a first electrode of the first resonator and to a second electrode of the second resonator of the further bulk acoustic wave device,
wherein the first electrode of the first resonator of the further bulk acoustic wave device is connected to a first electrode of the first resonator of the bulk acoustic wave device, and the second electrode of the second resonator of the further bulk acoustic wave device is connected to a second electrode of the second resonator of the bulk acoustic wave device,
wherein the second electrode of the first resonator and the first electrode of the second resonator of the bulk acoustic wave device are connected to a first terminal of the second port, and
wherein the second electrode of the first resonator and the first electrode of the second resonator of the further bulk acoustic wave device are connected to a second terminal of the second port.
24. A bulk acoustic wave device, comprising:
a first resonator and a second resonator, each of the first and second resonators comprising: a first electrode; a piezoelectric layer disposed over at least a portion of the first electrode; and a second electrode disposed over at least a portion of the piezoelectric layer, wherein the first and second resonators are acoustically coupled, the first and second resonators are electrically connected in parallel; and
a coupling layer disposed between the first resonator and the second resonator, wherein the first electrode of the first resonator and the first electrode of the second resonator are connected, and the second electrode of the first resonator and the second electrode of the second resonator are connected.
25. A filter, comprising:
a first stage; and
a second stage,
wherein at least one of the first stage and the second stage comprises a bulk acoustic wave device, the bulk acoustic wave device comprising:
a first resonator and a second resonator, each of the first and second resonators comprising: a first electrode; a piezoelectric layer disposed over at least a portion of the first electrode; and a second electrode disposed over at least a portion of the piezoelectric layer, wherein the first and second resonators are acoustically coupled, and the first and second resonators are electrically connected in parallel; and
a coupling layer disposed between the first resonator and the second resonator, wherein the first electrode of the first resonator and the first electrode of the second resonator are connected, and the second electrode of the first resonator and the second electrode of the second resonator are connected.