Method for manufacturing polarizer and laser processing apparatus for manufacturing the polarizer
View Patent ↗A method for manufacturing a polarizer includes forming a conductive thin film layer on a first surface of a substrate. The conductive thin film layer corresponding to a processing line is partially removed by a treatment laser beam irradiated along the processing line. The removing the conductive thin film layer forms a plurality of groove lines on a portion of the substrate from which the conductive thin film is removed and a plurality of striped lines formed on a portion of the substrate on which the conductive thin film remains between the groove lines.
1. A method of manufacturing a polarizer, the method comprising:
forming a conductive thin film layer on a first surface of a substrate;
partially removing the conductive thin film layer corresponding to processing lines, wherein the removing the conductive thin film layer comprises irradiating treatment laser beams along the processing lines:
forming a plurality of groove lines on a first portion of the substrate from which the conductive thin film is removed; and
forming a plurality of striped lines on a second portion of the substrate on which the conductive thin film remains between the groove lines,
wherein the removing the conductive thin film layer further comprises:
irradiating the treatment laser beams along first processing lines of the processing, lines and forming first groove lines;
moving the substrate relative to irradiation points of the treatment laser beams; and
irradiating the treatment laser beams along second processing lines of the processing lines and forming second groove lines which are different from the first groove lines; and
wherein the first groove lines and the second groove lines are alternately formed with each other.
2. The method of claim 1 , wherein the treatment laser beams are one selected from the group consisting of a F2 typed laser beam having a wavelength of about 157 nm, a ArF typed laser beam having a wavelength of about 190 nm, a KrF typed laser beam having a wavelength of about 250 nm, and a Femto-second laser beam having a wavelength of about 780 nm.
3. The method of claim 2 , wherein a width of each of the striped lines and a pitch defined as a distance between adjacent striped lines are each in a range of about 120 nm to about 200 nm.
4. The method of claim 1 , wherein a cross-section of the treatment laser beam formed on a processing point has an elongated oval shape.
5. The method of claim 4 , wherein a longitudinal direction of the elongated oval shape is substantially parallel with the processing lines.
6. The method of claim 1 , wherein the moving the substrate comprises using at least one of the groove lines as an align pattern to relatively move the substrate.
7. The method of claim 1 , wherein the moving the substrate comprises using at least one of the stripe lines as an align pattern to relatively move the substrate.
8. The method of claim 1 , wherein the removing the conductive thin film further comprises removing a residue of the conductive thin film which remains on the substrate from the treatment laser beams being irradiated onto the conductive thin film.
9. The method of claim 1 , further comprising:
forming a planarization layer covering the striped lines; and
forming a plurality of display elements on the planarization layer.
10. The method of claim 1 , further comprising forming a planarizing layer cover the striped lines; and
forming a plurality of display elements on a second surface of the substrate opposite to the first surface.