Enhancement mode field effect device and the method of production thereof
View Patent ↗A method is disclosed for producing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET or MESFET devices, comprising two active layers, e.g. a GaN/AlGaN layer. The method produces an enhancement mode device of this type, i.e. a normally-off device, by providing a passivation layer on the AlGaN layer, etching a hole in the passivation layer and not in the layers underlying the passivation layer, and depositing the gate contact in the hole, while the source and drain are deposited directly on the passivation layer. The characteristics of the active layers and/or of the gate are chosen such that no two-dimensional electron gas layer is present underneath the gate, when a zero voltage is applied to the gate. A device with this behavior is also disclosed.
1. An enhancement mode semiconductor device comprising:
a first active layer on a substrate;
a second active layer on the first active layer, the second active layer having a higher band-gap than the first active layer, and the second layer having a thickness of between 3 and 8 nm;
a passivation layer on the second active layer;
a source contact and a drain contact formed directly on and over the passivation layer;
at least one hole in the passivation layer, the at least one hole being located between the source and drain contact and not protruding into the layers underlying the passivation layer;
a gate contact in the hole, the gate contact having a width corresponding to the width of the at least one hole; and
a two-dimensional electron gas layer present between the active layers, the electron gas layer being present outside of the location of the gate contact but not present directly underneath the gate contact when the gate and source contact are at the same voltage and the two-dimensional gas layer being present underneath the gate contact when the drain contact is at a higher potential compared to the source contact and a positive voltage is applied to the gate contact.
2. The device according to claim 1 , wherein the substrate comprises a material selected from the following group: silicon, sapphire, SiC, GaN, AlN, GaAs and diamond.
3. The device according to claim 1 , wherein at least one of the first and second active layer comprises a group III nitride semiconductor material.
4. The device according to claim 3 , wherein the first active layer comprises a material selected from the following group: GaN, AlGaN, InGaN, InAlGaN and BN.
5. The device according to claim 3 , wherein the second active layer comprises a material selected from the following group: AlGaN, AlInN, and AlInGaN.
6. The device according to claim 1 , wherein the second active layer has a thickness between approximately 1 and 10 nm.
7. The device according to claim 1 , wherein the passivation layer comprises a material comprising an electron donating element and nitrogen.
8. The device according to claim 7 , wherein the passivation layer comprises a material selected from the group of SiN, BN, Si, CN and GeN.
9. The device according to claim 1 , wherein the passivation layer has a thickness between approximately 1 nm and 5000 nm.
10. The device according to claim 9 , wherein the passivation layer has a thickness between 3 nm and 20 nm.
11. The device according to claim 1 , further comprising a dielectric layer located in the hole and being present between the gate contact and the second active layer.
12. The device according to claim 1 , wherein the passivation layer is completely removed in the hole.
13. The device according to claim 1 , wherein the passivation layer is not completely removed in the hole.
14. The device according to claim 1 , further comprising a spacer layer in between the first and second active layer.
15. The device according to claim 14 , wherein the spacer layer comprises an AlN layer.
16. An enhancement mode field effect transistor comprising:
a first active layer on a substrate;
a second active layer on the first active layer, the second active layer having a higher band-gap than the first active layer, and the second layer having a thickness of between 3 and 8 nm;
a passivation layer on the second active layer;
a source contact and a drain contact formed directly on and over the passivation layer;
at least one hole in the passivation layer, the at least one hole being located between the source and drain contact and not protruding into the layers underlying the passivation layer; and
a gate contact in the hole, the gate contact having a width corresponding to the width of the at least one hole,
wherein a two-dimensional electron gas layer between the active layers is present outside the gate contact, wherein no substantial two-dimensional electron gas layer is present between the active layers directly underneath the gate contact, when the gate and source contact are at the same voltage, and the two-dimensional gas layer being present underneath the gate contact when the drain contact is at a higher potential compared to the source contact and a positive voltage is applied to the gate contact.
17. The device according to claim 11 , wherein the dielectric layer comprises a material selected from the group of SiO2, Al2O3, Ta2O5, HfO2, ZrO2, SiN, and SiON.
18. The device according to claim 16 , further comprising a dielectric layer located in the hole and being present between the gate contact and the second active layer, wherein the dielectric layer comprises a material selected from the group of SiO2, Al2O3, Ta2O5, HfO2, ZrO2, SiN, and SiON.
19. The device according to claim 11 , wherein the passivation layer is not completely removed from the hole.