Production of an improved color filter on a microelectronic imaging device comprising a cavity
View Patent ↗A microelectronic device includes a color filter equipped with a plurality of filtering elements, including several filtering elements. The device includes at least one first zone located inside a cavity and includes a first group of filtering elements having a first critical dimension, and at least one second zone at the periphery of the cavity, including a second group of filtering elements having a second critical dimension that is different from the first critical dimension.
1. A microelectronic device with a multilayer color filter, the microelectronic device comprising:
a plurality of filtering elements including
a plurality of first type filtering elements comprising a first material filtering a first range of wavelengths from a visible light spectrum,
a plurality of second type filtering elements comprising a second material filtering a second range of wavelengths from the visible light spectrum, and
a plurality of third type filtering elements comprising a third material filtering a third range of wavelengths from the visible light spectrum;
at least one first group of the filtering elements being inside a cavity and at a first level, and having a first critical dimension belonging to a first range;
at least one second group of the filtering elements being outside the cavity and at a second level above the first level and having a second critical dimension belonging to a second range.
2. The microelectronic device according to claim 1 wherein the second critical dimension is greater than the first critical dimension.
3. The microelectronic device according to claim 1 wherein the second critical dimension is greater than the first critical dimension; and further comprising a plurality of microlenses opposite at least the filtering elements of said at least one first group.
4. The microelectronic device according to claim 1 further comprising a zone comprising at least one of said first material, said second material, and said third material, said zone separating said at least one first group and said at least one second group.
5. The microelectronic device according to claim 1 further comprising a zone comprising a transparent material different from said first material, said second material, and said third material, said zone separating said at least one first group and said at least one second group.
6. The microelectronic device according to claim 1 wherein said plurality of filtering elements has a Bayer pattern.
7. The microelectronic device according to claim 1 further comprising a plurality of photoelectric detectors opposite said at least one first group of filtering elements located inside said cavity.
8. The microelectronic device according to claim 1 further comprising a plurality of microlenses opposite at least the filtering elements of said at least one first group.
9. A microelectronic device with a multilayer color filter, the microelectronic device comprising:
a plurality of filtering elements including
a plurality of first type filtering elements comprising a first material filtering a first range of wavelengths from a visible light spectrum,
a plurality of second type filtering elements comprising a second material filtering a second range of wavelengths from the visible light spectrum, and
a plurality of third type filtering elements comprising a third material filtering a third range of wavelengths from the visible light spectrum;
at least one first group of the filtering elements being inside a cavity and at a first level, and having a first dimension characteristic value;
at least one second group of the filtering elements being outside the cavity and at a second level above the first level and having a second dimension characteristic value.
10. The microelectronic device according to claim 9 wherein the second dimension characteristic value is greater than the first dimension characteristic value.
11. The microelectronic device according to claim 9 wherein the second dimension characteristic value is greater than the first dimension characteristic value; and
further comprising a plurality of microlenses opposite at least the filtering elements of said at least one first group.
12. The microelectronic device according to claim 9 further comprising a zone comprising at least one of said first material, said second material, and said third material, said zone separating said at least one first group and said at least one second group.
13. The microelectronic device according to claim 9 further comprising a zone comprising a transparent material different from said first material, said second material, and said third material, said zone separating said at least one first group and said at least one second group.
14. The microelectronic device according to claim 9 wherein said plurality of filtering elements has a Bayer pattern.
15. The microelectronic device according to claim 9 further comprising a plurality of photoelectric detectors opposite said at least one first group of filtering elements located inside said cavity.