Memory

1. A memory comprising:

an access control portion performing an internal access operation on the basis of an external access operation;

a refresh control portion performing a refresh operation;

a refresh division control portion dividing said refresh operation into a read operation and a rewrite operation; and

an address determination portion determining whether or not an address to be subjected to said refresh operation and an address to be subjected to said external access operation during said refresh operation coincide with each other.

2. The memory according to claim 1 , wherein

said refresh control portion controls whether or not to perform said rewrite operation of said refresh operation on the basis of the output of said address determination portion.

3. The memory according to claim 2 , wherein

when said address determination portion determines that said address to be subjected to said refresh operation and said address to be subjected to said external access operation during said refresh operation coincide with each other, said refresh control portion terminates said refresh operation without said rewrite operation of said refresh operation with respect to coincident said address.

4. The memory according to claim 2 , wherein

said refresh control portion performs said rewrite operation of said refresh operation when said address determination portion determines that said address to be subjected to said refresh operation and said address to be subjected to said external access operation during said refresh operation do not coincide with each other.

5. The memory according to claim 1 , further comprising a latch portion holding data read by said read operation of said refresh operation, wherein

said refresh control portion controls whether or not to replace data held in said latch portion with data written by said external access operation on the basis of the output of said address determination portion.

6. The memory according to claim 5 , wherein

when said address determination portion determines that said address to be subjected to said refresh operation and said address to be subjected to said external access operation during said refresh operation coincide with each other, said refresh control portion replaces said data held in said latch portion with said data written by said external access operation and performs said rewrite operation of said refresh operation with respect to coincident said address.

7. The memory according to claim 5 , wherein

when said address determination portion determines that said address to be subjected to said refresh operation and said address to be subjected to said external access operation during said refresh operation do not coincide with each other, said refresh control portion performs said rewrite operation of said refresh operation without replacing said data held in said latch portion with said data written by said external access operation.

8. The memory according to claim 1 , wherein

said refresh division control portion divides said rewrite operation into a first rewrite operation and a second rewrite operation, and

the memory performs said read operation, said first rewrite operation and said second rewrite operation at least either before or after different said internal access operations corresponding to different said external access operations respectively.

9. The memory according to claim 1 , further comprising:

an external access detection portion detecting said external access operation; and

a refresh determination portion determining whether or not to perform said refresh operation on the basis of detection of said external access operation by said external access detection portion and the operating state of said access control portion, wherein

said access control portion performs said refresh operation at least either before or after said internal access operation on the basis of the result of determination of said refresh determination portion.

10. The memory according to claim 9 , wherein

said refresh determination portion outputs a signal for said refresh operation if said access control portion performs neither said internal access operation nor said refresh operation when said external access detection portion detects said external access operation.

11. The memory according to claim 9 , wherein

said refresh determination portion outputs a signal controlling so as not to perform said refresh operation if performing said internal access operation or said refresh operation when said external access detection portion detects said external access operation.

12. The memory according to claim 1 , further comprising an external access counter portion counting the access frequency of said external access operation, wherein

said access control portion performs said refresh operation on the basis of said access frequency counted by said external access counter portion.

13. The memory according to claim 1 , performing said refresh operation regardless of the access frequency of said external access operation.

14. The memory according to claim 1 , further comprising a memory cell consisting of a ferroelectric capacitor, and

performing said refresh operation with respect to said memory cell consisting of said ferroelectric capacitor.

15. The memory according to claim 1 , wherein

said access control portion includes an internal clock generation portion generating an internal clock for said internal access operation and an internal clock for said refresh operation.

16. The memory according to claim 1 , further comprising:

a word line and a bit line arranged to intersect with each other; and

a memory cell arranged on the intersectional position between said word line and said bit line, and

collectively performing said refresh operation on said memory cell linked to said word line every said word line.

17. The memory according to claim 1 , further comprising a switching portion switching a row address signal corresponding to an internal address signal for said internal access operation and another row address signal corresponding to a refresh address signal for said refresh operation.

18. The memory according to claim 1 , wherein

said external access operation includes a write operation, and

said refresh control portion controls whether or not to perform said rewrite operation of said refresh operation on the basis of the output of said address determination portion when said external access operation is said write operation.

19. The memory according to claim 1 , performing said read operation and said rewrite operation of said refresh operation after different said internal access operations corresponding to different said external access operations respectively.

20. A memory comprising:

access control means performing an internal access operation on the basis of an external access operation;

refresh control means performing an refresh operation;

refresh division control means dividing said refresh operation into a read operation and a rewrite operation; and

address determination means determining whether or not an address to be subjected to said refresh operation and an address to be subjected to said external access operation during said refresh operation coincide with each other.