Method and device for the independent extraction of carrier concentration level and electrical junction depth in a semiconductor substrate

1. An optical measurement method of determining a dopant concentration profile, characterized by a concentration level and a junction depth, of a semiconductor substrate of a semiconductor material, the method comprising:

measuring first amplitudes of measured reflection signals obtained by creating different concentrations of excess carriers and impinging a probe laser beam at least partially reflected by the excess carriers on the semiconductor substrate having a dopant profile characterized by a concentration level and a junction depth;

determining first correlations between the first amplitudes and the dopant concentration level for a dopant in the substrate;

measuring a second amplitude of a reflection signal obtained by creating excess carriers and impinging a probe laser beam at least partially reflected by the excess carriers, on the semiconductor substrate having a dopant profile, characterized by a concentration level and a junction depth;

determining second correlations between the first amplitudes and the junction depth of the dopant profile of the semiconductor substrate; and

determining from the first and second correlations and the second amplitude the junction depth and the dopant concentration level for the semiconductor substrate.

2. An optical measurement method according to claim 1 , wherein creating excess carriers comprises impinging a pump laser beam.

3. An optical measurement method according to claim 1 , wherein measuring the first or the second amplitude comprises:

measuring the reflection signal as a function of the pump power level, thus yielding a power curve, the power curve showing an inflection point,

determining a first pump power level value corresponding to the inflection point, and

determining the reflection signal at a second pump power level.

4. An optical measurement method according to claim 3 , wherein determining a junction depth and a carrier concentration level for the semiconductor substrate comprises determining a carrier concentration level from the reflection signal at the second pump power level and the first pump power level corresponding to the inflection point.

5. An optical measurement method according to claim 3 , wherein

determining the reflection signal is carried out at a first predetermined value of the pump laser power;

and wherein determining the carrier concentration level from the reflected signal is carried out at a second predetermined value of the pump laser power, the first pump laser power corresponding to the inflection point.

6. An optical measurement method according to claim 3 , wherein the semiconductor substrate comprises a highly-lowly doped structure.

7. An optical measurement method according to claim 6 , wherein the semiconductor substrate has a box-like dopant profile.

8. An optical measurement method according to claim 3 , further comprising determining a junction depth of the semiconductor substrate from the reflection signal at a second pump laser power and the determined carrier concentration level.

9. An optical measurement method according to claim 3 , wherein generating a reflection signal comprises:

generating an excess charge carrier profile in the semiconductor substrate by focusing a pump laser beam onto the semiconductor substrate, and

illuminating the semiconductor substrate with a probe laser beam.

10. An optical measurement method according to claim 3 , wherein the inflection point is determined based on a constant value of the second derivative of the power curve.

11. An optical measurement method according to claim 10 , wherein the constant value of the second derivative of the power curve is close to zero.

12. An optical measurement method according to claim 3 , wherein the optical measurement method is based on carrier illumination.

13. An optical measurement method according to claim 12 , wherein the pump laser beam has a fixed wavelength of approximately 830 nm.

14. An optical measurement method according to claim 1 , wherein measuring the first or the second amplitude of the reflection signal comprises:

determining a component of the reflection signal which is in phase with the pump laser signal; and

determining a component of the reflection signal which is in 90° phase difference with the pump laser signal.

15. An optical measurement method according to claim 14 , wherein the pump laser signal is at a pre-determined power level.

16. An optical measurement method according to claim 14 , wherein determining a junction depth and a carrier concentration level for the semiconductor substrate comprises determining a carrier concentration level from an amplitude of the reflection signal which is in phase with the pump laser signal and from an amplitude of the reflection signal which is in 90° phase difference with the pump laser signal.

17. An optical measurement method according to claim 16 , wherein determining a junction depth and a carrier concentration level for the semiconductor substrate comprises determining a junction depth from the determined component of the reflection signal which is in 90° phase difference with the pump laser signal and from the determined carrier concentration level.

18. An optical measurement method according to claim 14 , wherein the semiconductor substrate is a highly-lowly doped structure.

19. An optical measurement method according to claim 18 , wherein the semiconductor substrate has a box-like dopant profile.

20. An optical measurement method according to claim 14 , wherein generating a reflection signal comprises:

generating an excess charge carrier profile in the semiconductor substrate by focusing a pump laser beam onto the semiconductor substrate, and

illuminating the semiconductor substrate with a probe laser beam.

21. An optical measurement method according to claim 14 , wherein the optical measurement method is based on thermal wave technology.

22. An optical measurement method according to claim 21 , wherein the pump laser beam has a fixed wavelength of approximately 790 nm.

23. An optical measurement method of calibrating a substrate of a semiconductor material having a dopant profile, characterized by a concentration level and a junction depth, in the substrate, the method comprising:

determining a first set of correlation curves between

first amplitudes of measured reflection signals obtained by creating different concentrations of excess carriers in the substrate and impinging a probe laser beam at least partially reflected by the excess carriers, on the substrate and

dopant concentration levels for a dopant in the substrate; and

determining a second set of correlation curves between the amplitudes of the measured reflected signal and junction depths of the substrate,

wherein the process of determining a first set of correlation curves comprises:

providing at least two semiconductor substrates with predetermined different dopant profiles, each dopant profile characterized by a concentration level and junction depth,

measuring for each of the at least two semiconductor substrates a first amplitude of reflected signals, the reflecting signals being generated by

creating different concentrations of excess carriers in the sample, and

a probe laser beam at least partially being reflected by the excess carriers, on each of the at least two semiconductor substrates, and

determining a first correlation between the first measured amplitude of each reflected signal and the concentration level of the at least two semiconductor substrates.

24. An optical measurement method according to claim 23 , wherein determining a second set of correlation curves comprises determining a second correlation between the first measured amplitude of each reflected signal and the junction depth of the at least two semiconductor substrates.