Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same
View Patent ↗A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser (EML) assembly. The adoption of this SAG technique to grow the ridge structure results in the formation of a self-assembled and self-aligned ridge structure that has a very precise configuration. The use of this process enables straight, bent and tilted ridge structures to be formed with high precision. In addition, because the ridge structure is self-assembled and self-aligned, a lesser number of processing steps are required to create the photonic device in comparison to the known approach that uses wet chemical etching techniques to form the ridge structure. The high precision of the ridge structure and the lesser number of processing steps needed to create the device increase manufacturing yield and allow overall cost of the device to be reduced.
1. An electroabsorption modulator distributed feedback laser (EML) assembly comprising an electroabsorption modulator (EAM) portion integrated with a distributed feedback laser (DFB) portion, the EML assembly comprising:
a substrate having a lower surface and an upper surface;
one or more layers including a buffer layer, one of said one or more layers having a lower surface that is in contact with the upper surface of the substrate;
one or more layers including a multi quantum well (MQW) layer, one of said one or more layers that include the MQW layer having a lower surface that is in contact with an upper surface of an uppermost layer of said one or more layers that include the buffer layer;
one or more layers including a grating layer, one of said one or more layers that include the grating layer having a lower surface that is in contact with an upper surface of one of said one or more layers that include the MQW layer, the grating layer having a diffractive grating defined in at least a portion of the grating layer;
one or more cladding and contact layers, one of said one or more cladding and contact layers having a lower surface that is in contact with an upper surface of an uppermost layer of said one or more layers that include the grating layer;
a ridge structure made of one or more cladding and contact layers that is grown on an upper surface of an uppermost layer of said one or more layers that include the grating layer, wherein the ridge structure is grown using a Selective Area Growth (SAG) technique; and
an inter-contact electrical isolation region disposed between the EAM and DFB portions to electrically isolate the EAM and DFB portions from each other.
2. The EML assembly of claim 1 , wherein the ridge structure has a width in a width-wise direction of the ridge structure, a height in a height-wise direction of the ridge structure and a length in a length-wise direction of the ridge structure, the length being greater than the width and height, and wherein the ridge structure is substantially straight in the lengthwise direction of the ridge structure relative to a main crystallographic axis of the substrate.
3. The EML assembly claim 1 , wherein the ridge structure has a width in a width-wise direction of the ridge structure, a height in a height-wise direction of the ridge structure and a length in a length-wise direction of the ridge structure, the length being greater than the width and height, and wherein the ridge structure includes at least a portion that is substantially bent in the lengthwise direction of the ridge structure relative to a main crystallographic axis of the substrate by some angle, Φ.
4. The EML assembly of claim 3 , wherein Φ has a value that ranges from about 7 degrees to about 10 degrees.
5. The EML assembly of claim 1 , wherein the ridge structure has a width in a width-wise direction of the ridge structure, a height in a height-wise direction of the ridge structure and a length in a length-wise direction of the ridge structure, the length being greater than the width and height, and wherein the ridge structure includes at least a portion that is substantially tilted in the lengthwise direction of the ridge structure relative to a main crystallographic axis of the substrate by some tilt angle, θ.
6. The EML assembly of claim 5 , wherein the diffractive grating that is defined in at least a portion of said one or more layers that include the grating layer is tilted relative to a main crystallographic axis of the substrate by the tilt angle, θ, the grating having a corrugation that is substantially perpendicular to the portion of the ridge structure that is substantially tilted in the lengthwise direction.
7. The EML assembly of claim 5 , wherein θ has a value that ranges from about 5 degrees to about 15 degrees.
8. The EML assembly of claim 1 , wherein the diffractive grating is defined in the grating layer in the DFB portion and is not defined in the EAM portion.
9. The EML assembly of claim 8 , wherein photonic semiconductor device is an aluminium (Al)-based semiconductor device, the substrate comprising n-type Indium Phosphide (InP), the buffer layer comprising n-type InP, the MQW layer comprising n-type Aluminum Gallium Indium Arsenide (AlGaInAs), the grating layer comprising one of AlGaInAs and InGaAsP, the ridge structure comprising p-type InP and p-type InGaAs.
10. A method for making an electroabsorption modulator distributed feedback laser (EML) assembly comprising an electroabsorption modulator (EAM) portion integrated with a distributed feedback laser (DFB) portion, the method comprising:
providing a substrate having a lower surface and an upper surface;
putting one or more layers including a buffer layer on the upper surface of the substrate such that a lower surface of one of said one or more layers is in contact with the upper surface of the substrate;
putting one or more layers including a multi quantum well (MQW) layer on said one or more layers that include the buffer layer such that a lower surface of one of said one or more layers that include the MQW layer is in contact with an upper surface of an uppermost layer of said one or more layers that include the buffer layer;
putting one or more layers including a grating layer on said one or more layers that include the MQW layer such that a lower surface of one of said one or more layers that include the grating layer is in contact with an upper surface of one of said one or more layers that include the MQW layer;
putting one or more cladding and contact layers on said one or more layers that include the grating layer such that a lower surface of one of said one or more cladding and contact layers is in contact with an upper surface of an uppermost layer of said one or more layers that include the grating layer;
defining a diffractive grating in at least a portion of the grating layer;
using a selective area growth (SAG) technique to grow a ridge structure on an upper surface of an uppermost layer of said one or more cladding and contact layers; and
forming an inter-contact electrical isolation region between the EAM and DFB portions to electrically isolate the EAM and DFB portions from each other.
11. The method of claim 10 , wherein the ridge structure has a width in a width-wise direction of the ridge structure, a height in a height-wise direction of the ridge structure and a length in a length-wise direction of the ridge structure, the length being greater than the width and height, and wherein using the SAG technique to grow the ridge structure includes selecting a masking configuration and growth conditions that cause the resulting ridge structure to be substantially straight in the lengthwise direction of the ridge structure relative to a main crystallographic axis of the substrate.
12. The method of claim 10 , wherein the ridge structure has a width in a width-wise direction of the ridge structure, a height in a height-wise direction of the ridge structure and a length in a length-wise direction of the ridge structure, the length being greater than the width and height, and wherein using the SAG technique to grow the ridge structure includes selecting a masking configuration and growth conditions that cause at least a portion of the resulting ridge structure to be substantially bent in the lengthwise direction of the ridge structure relative to a main crystallographic axis of the substrate by some angle, Φ.
13. The method of claim 12 , wherein Φ has a value that ranges from about 7 degrees to about 10 degrees.
14. The method of claim 10 , wherein the ridge structure has a width in a width-wise direction of the ridge structure, a height in a height-wise direction of the ridge structure and a length in a length-wise direction of the ridge structure, the length being great than the width and height, and wherein using the SAG technique to grow the ridge structure includes selecting a masking configuration and growth conditions that cause at least a portion of the resulting ridge structure to be substantially tilted in the lengthwise direction of the ridge structure relative to a main crystallographic axis of the substrate by some tilt angle, θ.
15. The method of claim 14 , wherein the diffractive grating that is defined in at least a portion of said one or more layers that include the grating layer is defined such that the defined grating is tilted relative to a main crystallographic axis of the substrate by the tilt angle, θ, and such that the defined grating has a corrugation that is substantially perpendicular to the portion of the ridge structure that is substantially tilted in the lengthwise direction.
16. The method of claim 14 , wherein θ has a value that ranges from about 5 degrees to about 15 degrees.
17. The method of claim 10 , wherein the diffractive grating is defined in the grating layer in the DFB portion and is not defined in the EAM portion.
18. The method of claim 17 , wherein the EML assembly is an aluminium (Al)-based semiconductor device, the substrate comprising n-type Indium Phosphide (InP), the buffer layer comprising n-type InP, the MQW layer comprising n-type Aluminum Gallium Indium Arsenide (AlGaInAs), the grating layer comprising one of AlGaInAs and InGaInAs, the ridge structure comprising one of p-type InP and p-type InGaAs.
19. A photonic semiconductor device comprising:
a substrate having a lower surface and an upper surface;
one or more layers including a buffer layer, one of said one or more layers having a lower surface that is in contact with the upper surface of the substrate;
one or more layers including a multi quantum well (MQW) layer, one of said one or more layers that include the MQW layer having a lower surface that is in contact with an upper surface of an uppermost layer of said one or more layers that include the buffer layer;
one or more layers including a grating layer, one of said one or more layers that include the grating layer having a lower surface that is in contact with an upper surface of one of said one or more layers that include the MQW layer, the grating layer having a diffractive grating defined in at least a portion of the grating layer;
one or more cladding and contact layers, one of said one or more cladding and contact layers having a lower surface that is in contact with an upper surface of an uppermost layer of said one or more layers that include the grating layer; and
a ridge structure made of one or more cladding and contact layers that is grown on an upper surface of an uppermost layer of said one or more layers that include the grating layer, wherein the ridge structure is grown using a Selective Area Growth (SAG) technique, wherein the ridge structure has a width in a width-wise direction of the ridge structure, a height in a height-wise direction of the ridge structure and a length in a length-wise direction of the ridge structure, the length being greater than the width and height, and wherein the ridge structure includes at least a portion that is substantially tilted in the lengthwise direction of the ridge structure relative to a main crystallographic axis of the substrate by some tilt angle, θ, and wherein the diffractive grating that is defined in at least a portion of said one or more layers that include the grating layer is tilted relative to a main crystallographic axis of the substrate by the tilt angle, θ, the grating having a corrugation that is substantially perpendicular to the portion of the ridge structure that is substantially tilted in the lengthwise direction.
20. An aluminium (Al)-based photonic semiconductor device comprising:
a substrate having a lower surface and an upper surface, the substrate comprising n-type Indium Phosphide (InP);
one or more layers including a buffer layer, one of said one or more layers having a lower surface that is in contact with the upper surface of the substrate, the buffer layer comprising n-type InP;
one or more layers including a multi quantum well (MQW) layer, one of said one or more layers that include the MQW layer having a lower surface that is in contact with an upper surface of an uppermost layer of said one or more layers that include the buffer layer, the MQW layer comprising n-type Aluminum Gallium Indium Arsenide (AlGaInAs);
one or more layers including a grating layer, one of said one or more layers that include the grating layer having a lower surface that is in contact with an upper surface of one of said one or more layers that include the MQW layer, the grating layer having a diffractive grating defined in at least a portion of the grating layer, the grating layer comprising one of AlGaInAs and InGaAsP;
one or more cladding and contact layers, one of said one or more cladding and contact layers having a lower surface that is in contact with an upper surface of an uppermost layer of said one or more layers that include the grating layer; and
a ridge structure made of one or more cladding and contact layers that is grown on an upper surface of an uppermost layer of said one or more layers that include the grating layer, wherein the ridge structure is grown using a Selective Area Growth (SAG) technique, the ridge structure comprising p-type InP and p-type InGaAs.
21. A method for making a photonic semiconductor device, the method comprising:
providing a substrate having a lower surface and an upper surface;
putting one or more layers including a buffer layer on the upper surface of the substrate such that a lower surface of one of said one or more layers is in contact with the upper surface of the substrate;
putting one or more layers including a multi quantum well (MQW) layer on said one or more layers that include the buffer layer such that a lower surface of one of said one or more layers that include the MQW layer is in contact with an upper surface of an uppermost layer of said one or more layers that include the buffer layer;
putting one or more layers including a grating layer on said one or more layers that include the MQW layer such that a lower surface of one of said one or more layers that include the grating layer is in contact with an upper surface of one of said one or more layers that include the MQW layer;
putting one or more cladding and contact layers on said one or more layers that include the grating layer such that a lower surface of one of said one or more cladding and contact layers is in contact with an upper surface of an uppermost layer of said one or more layers that include the grating layer;
defining a diffractive grating in at least a portion of the grating layer; and
using a selective area growth (SAG) technique to grow a ridge structure on an upper surface of an uppermost layer of said one or more cladding and contact layers, wherein the ridge structure has a width in a width-wise direction of the ridge structure, a height in a height-wise direction of the ridge structure and a length in a length-wise direction of the ridge structure, the length being greater than the width and height, and wherein the ridge structure includes at least a portion that is substantially tilted in the lengthwise direction of the ridge structure relative to a main crystallographic axis of the substrate by some tilt angle, θ, and wherein the diffractive grating that is defined in at least a portion of said one or more layers that include the grating layer is tilted relative to a main crystallographic axis of the substrate by the tilt angle, θ, the grating having a corrugation that is substantially perpendicular to the portion of the ridge structure that is substantially tilted in the lengthwise direction.
22. A method for making an aluminium (Al)-based photonic semiconductor device, the method comprising:
providing a substrate having a lower surface and an upper surface, the substrate comprising n-type Indium Phosphide (InP);
putting one or more layers including a buffer layer on the upper surface of the substrate such that a lower surface of one of said one or more layers is in contact with the upper surface of the substrate, the buffer layer comprising n-type InP;
putting one or more layers including a multi quantum well (MQW) layer on said one or more layers that include the buffer layer such that a lower surface of one of said one or more layers that include the MQW layer is in contact with an upper surface of an uppermost layer of said one or more layers that include the buffer layer;
putting one or more layers including a grating layer on said one or more layers that include the MQW layer such that a lower surface of one of said one or more layers that include the grating layer is in contact with an upper surface of one of said one or more layers that include the MQW layer, the MQW layer comprising n-type Aluminum Gallium Indium Arsenide (AlGaInAs);
putting one or more cladding and contact layers on said one or more layers that include the grating layer such that a lower surface of one of said one or more cladding and contact layers is in contact with an upper surface of an uppermost layer of said one or more layers that include the grating layer, the grating layer comprising one of AlGaInAs and InGaAsP;
defining a diffractive grating in at least a portion of the grating layer; and
using a selective area growth (SAG) technique to grow a ridge structure on an upper surface of an uppermost layer of said one or more cladding and contact layers, the ridge structure comprising p-type InP and p-type InGaAs.