IP Library Granted Patent US 7,705,698
Granted Patent B2
US 7,705,698 · App. 11/769,987 · Granted Apr 27, 2010

Field effect transistor and a linear antenna switch arm

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,705,698
App. No.
11/769,987
Granted
Apr 27, 2010
Kind
B2
Abstract

A field effect transistor comprising a substrate; an electrically conducting channel within the substrate; an electrically conducting source on the substrate comprising a source finger; an electrically conducing drain on the substrate comprising a drain finger; the source and drain fingers being separated to define a path therebetween; at least one electrically conducting source/drain strip extending along the path; at least one rectifying gate strip extending along the path on each side of the source/drain strip, each gate strip being adapted to control the current flow in the conducting channel.

Claims (37)

1. A field effect transistor comprising:

a substrate;

an electrically conducting channel within the substrate;

an electrically conducting source on the substrate comprising a source finger;

an electrically conducing drain on the substrate comprising a drain finger;

the source and the drain fingers being separated to define a path therebetween;

at least one electrically conducting source/drain strip extending along the path;

at least one rectifying gate strip extending along the path on each side of the source/drain strip, each gate strip being adapted to control a current flow in the conducting channel.

2. A field effect transistor as claimed in claim 1 , wherein at least one of the source and the drain has a plurality of fingers, the source and drain fingers being interdigitated to define a meandering path.

3. A field effect transistor as claimed in claim 1 comprising a plurality of source/drain strips and a plurality of gate strips.

4. A field effect transistor as claimed in claim 1 , wherein at least some of the source/drain strips and gate strips are arranged in a repeating pattern across a width of the path.

5. A field effect transistor as claimed in claim 4 , wherein the repeating pattern comprises alternating source/drain and gate strips.

6. A field effect transistor as claimed in claim 4 , wherein the repeating pattern comprises a plurality of gate strips and then at least one source/drain strip.

7. A linear antenna switch arm comprising:

a field effect transistor comprising an electrically conducting source having a source finger and an electrically conducting drain having a drain finger with the source and the drain fingers being separated to define a path therebetween and at least one electrically conducting source/drain strip extending along the path;

a signal line extending between the source and the drain, the signal line including at least one signal line resistor, and

a connection line extending between the source/drain strip and the signal line, the connection line and the signal line joining at a node.

8. A linear antenna switch arm as claimed in claim 7 , wherein the connection line comprises a resistor.

9. A linear antenna switch arm as claimed in claim 7 , wherein one of the at least one signal line resistor is arranged between the source and the node.

10. A linear antenna switch arm as claimed in claim 7 , wherein one of the at least one signal line resistor is arranged between the drain and the node.

11. A linear antenna switch arm as claimed in claim 7 , wherein a plurality of source/drain strips are connected to the signal line by the connection lines, the signal line and connection lines joining at nodes.

12. A linear antenna switch arm as claimed in claim 11 , wherein at least one connection line comprises a resistor.

13. A linear antenna switch arm as claimed in claim 12 , wherein each connection line comprises a resistor.

14. A linear antenna switch arm as claimed in claim 11 , wherein at least one of the at least one signal line resistor is arranged between the source and a first node in the signal line.

15. A linear antenna switch arm as claimed in claim 11 , wherein at least one of the at least one signal line resistor is arranged between the drain and a last node in the signal line.

16. A field effect transistor as claimed in claim 11 , wherein at least one of the at least one signal line resistor is arranged between the nodes and the signal line.

17. A linear antenna switch arm as claimed in claim 11 , wherein the nodes are short-circuited together by the signal line.

18. A field effect transistor as claimed in claim 5 , wherein the repeating pattern comprises a plurality of gate strips and then at least one source/drain strip.

19. A linear antenna switch arm as claimed in claim 7 , wherein the field effect transistor comprises a substrate and an electrically conducting channel within the substrate.

20. A linear antenna switch arm as claimed in claim 19 , wherein the source and the drain are on the substrate.

21. A linear antenna switch arm as claimed in claim 20 , wherein the field effect transistor comprises at least one rectifying gate strip extending along the path on each side of the source/drain strip, each gate strip being adapted to control a current flow in the conducting channel.

22. A linear antenna switch arm as claimed in claim 21 , comprising a plurality of source/drain strips and a plurality of gate strips.

23. A linear antenna switch arm as claimed in claim 22 , wherein at least some of the source/drain strips and gate strips are arranged in a repeating pattern across a width of the path with the repeating pattern comprising alternating source/drain and gate strips.

24. A linear antenna switch arm as claimed in claim 23 , wherein the repeating pattern comprises a plurality of gate strips and then at least one source/drain strip.

25. A linear antenna switch arm as claimed in claim 14 , wherein at least one of the at least one signal line resistor is arranged between the drain and a last node in the signal line.

26. A linear antenna switch arm as claimed in claim 7 , wherein at least one of the source and the drain has a plurality of fingers, the source and drain fingers being interdigitated to define a meandering path.

27. A field effect transistor as claimed in claim 1 wherein the field effect transistor is equivalent to at least two single gate field effect transistors.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2019
From: RFMD (UK) LIMITED
To: QORVO US, INC.
Reel/Frame 051330/0388 →
CHANGE OF NAME Recorded Apr 16, 2009
From: FILTRONIC COMPOUND SEMICONDUCTORS LIMITED
To: RFMD (UK) LIMITED
Reel/Frame 022552/0462 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2007
From: ARNOLD, RONALD
To: FILTRONIC COMPOUND SEMICONDUCTORS LIMITED
Reel/Frame 019742/0186 →