Thin film transistor, organic light emitting device including thin film transistor, and manufacturing method thereof
View Patent ↗The present invention relates to a thin film transistor, a method thereof and an organic light emitting device including the thin film transistor. According to an embodiment of the present invention, the thin film transistor includes a substrate, a control electrode, an insulating layer, a first electrode and a second electrode, a first ohmic contact layer and a second ohmic contact layer, and a semiconductor layer. The control electrode is formed on the substrate, and the insulating layer is formed on the control electrode. The first and the second electrodes are formed on the insulating layer. The first ohmic contact layer and the second ohmic contact layer are formed on the first electrode and the second electrode. The semiconductor layer is formed on the first ohmic contact layer and the second ohmic contact layer to fill between the first and the second electrodes.
1. An organic light emitting device comprising:
a substrate;
a driving transistor comprising:
a first control electrode formed on the substrate;
an insulating layer formed on the first control electrode and the substrate;
a first electrode and a second electrode spaced apart from each other with respect to the first control electrode and formed on the insulating layer;
a first ohmic contact layer and a second ohmic contact layer formed on the first electrode and the second electrode; and
a first semiconductor layer formed on the first ohmic contact layer and the second ohmic contact layer to fill the first electrode and the second electrode;
a pixel electrode connected to the second electrode;
an organic light emitting member formed on the pixel electrode;
a counter electrode formed on the organic light emitting member; and
a switching transistor electrically connected to the first control electrode,
wherein the switching transistor comprises:
a second control electrode connected to a gate line, a second semiconductor layer formed in the area corresponding to the second control electrode;
a third electrode connected to a data line and a fourth electrode electrically connected to the second semiconductor layer;
a third ohmic contact layer formed between the third electrode and the second semiconductor layer; and
a fourth ohmic contact layer formed between the fourth electrode and the second semiconductor layer.
2. The organic light emitting device of claim 1 , wherein the second control electrode is formed of the same layer with the first control electrode.
3. The organic light emitting device of claim 1 , wherein the third electrode and the fourth electrode are formed of the same layer with the first electrode and the second electrode.
4. The organic light emitting device of claim 3 , wherein the second semiconductor layer is formed of the same layer with the first semiconductor layer.
5. The organic light emitting device of claim 4 , wherein the third ohmic contact layer and the fourth ohmic contact layer are formed of the same layer with the first ohmic contact layer and the second ohmic contact layer.
6. The organic light emitting device of claim 1 , wherein the third ohmic contact layer and the fourth ohmic contact layer covers the opposite side surfaces of the third electrode and the fourth electrode.
7. The organic light emitting device of claim 1 , wherein the second semiconductor layer comprises amorphous silicon, microcrystalline silicon, or polysilicon.
8. The organic light emitting device of claim 1 , wherein the third ohmic contact layer and the fourth ohmic contact layer have the same shape with the third electrode and the fourth electrode.
9. The organic light emitting display of claim 1 , wherein the first ohmic contact layer and the second ohmic contact layer have the same shape with the first electrode and the second electrode.
10. The organic light emitting device of claim 1 , wherein the first semiconductor layer comprises amorphous silicon, microcrystalline silicon, or polysilicon.
11. The organic light emitting device of claim 1 , wherein the first ohmic contact layer and the second ohmic contact layer cover the opposite side surfaces of the first electrode and the second electrode.