IP Library Granted Patent US 7,917,042
Granted Patent B2
US 7,917,042 · App. 11/772,105 · Granted Mar 29, 2011

High speed optoelectronic receiver

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Quick Facts
Patent No.
US 7,917,042
App. No.
11/772,105
Granted
Mar 29, 2011
Kind
B2
Abstract

A novel 100+ Gbit/s opto-electronic receiver uses hybrid integration of a photodiode and a demultiplexer. The photodiode converts a high speed optical data stream to an electrical data stream that is input to an electronic demultiplexer. The photodiode and the demultiplexer are connected together by a novel planar microwave transmission structure.

Claims (58)

1. A high speed optoelectronic receiver, comprising:

a high speed optical input adapted to receive an optical data stream;

a photodiode connected to the optical input adapted to produce an electronic data stream corresponding to the optical data stream;

a demultiplexer having an input adapted to receive the electronic data stream and produce a plurality of lower data rate tributary data streams; and

a planar transmission line connected between the photodiode and the demultiplexer and adapted to connect the electronic data stream from the photodiode to the input of the demultiplexer, said planar transmission line including

a planar dielectric substrate having a first side and a second side;

a strip of conductive material formed on the first side of the substrate;

a first ground plane formed on the first side of the substrate and insulated from the strip of conductive material;

a second ground plane formed on the first side of the substrate and insulated from the strip of conductive material;

a third ground plane formed on the second side of the substrate; and

at least one via from the first to the second side of the substrate adapted to connect at least one of the first and second ground planes to the third ground plane.

2. The receiver of claim 1 , in which the photodiode comprises a ground signal ground interface, comprising:

a first ground terminal connected to the first ground plane;

a second ground terminal connected to the second ground plane; and

a signal terminal connected to the strip of conductive material.

3. The receiver of claim 2 , in which the demultiplexer comprises a ground signal interface, comprising:

a first ground input terminal connected to one of the first and second ground planes; and

a first signal input terminal connected to the strip of conductive material.

4. The receiver of claim 3 , in which the demultiplexer is a differential multiplexer, comprising:

a second ground input terminal;

a second signal input terminal; and

a resistor formed on the substrate that terminates the second ground and signal terminals of the differential multiplexer.

5. The receiver of claim 1 , in which the demultiplexer comprises a ground signal interface, comprising:

a first ground input terminal connected to one of the first and second ground planes; and

a first signal input terminal connected to the strip of conductive material.

6. The receiver of claim 1 , in which the one or more vias comprises an edge via formed in one side of the substrate so that ground currents from the first side of the substrate are able to redistribute on the second side of the substrate as soon as possible to enhance the broadband performance of the receiver.

7. A high speed optoelectronic receiver, comprising:

a high speed optical input adapted to receive an optical data stream;

a photodiode connected to the optical input adapted to produce an electronic data stream corresponding to the optical data stream;

a demultiplexer having an input adapted to receive the electronic data stream and produce a plurality of lower data rate tributary data streams; and

a planar microwave transmission structure connected between the photodiode and the demultiplexer and adapted to connect the electronic data stream from the photodiode to the input of the demultiplexer

wherein the transmission structure DC couples the photodiode to the demultiplexer and includes

a planar dielectric substrate having a first side and a second side;

a strip of conductive material formed on the first side of the substrate;

a planar ground structure on the dielectric substrate insulated from the strip of conductive material, said planar ground structure having;

a first ground plane formed on the first side of the substrate and insulated from the strip of conductive material;

a second ground plane formed on the first side of the substrate and insulated from the strip of conductive material;

a third ground plane formed on the second side of the substrate; and

at least one via from the first to the second side of the substrate adapted to connect at least one of the first and second ground planes to the third ground plane.

8. The receiver of claim 7 , in which the photodiode comprises a ground signal ground interface, comprising:

a first ground terminal connected to the first ground plane;

a second ground terminal connected to the second ground plane; and

a signal terminal connected to the strip of conductive material.

9. The receiver of claim 8 , in which the demultiplexer comprises a ground signal interface, comprising:

a first ground input terminal connected to one of the first and second ground planes; and

a first signal input terminal connected to the strip of conductive material.

10. The receiver of claim 9 , in which the demultiplexer is a differential multiplexer, comprising:

a second ground input terminal;

a second signal input terminal; and

a resistor formed on the substrate that terminates the second ground and signal terminals of the differential multiplexer.

11. The receiver of claim 7 , in which the demultiplexer comprises a ground signal interface, comprising:

a first ground input terminal connected to one of the first and second ground planes; and

a first signal input terminal connected to the strip of conductive material.

12. The receiver of claim 7 , in which the one or more vias comprises an edge via formed in one side of the substrate so that ground currents from the first side of the substrate are able to redistribute on the second side of the substrate as soon as possible to enhance the broadband performance of the receiver.

13. The receiver of claim 7 , in which the planar microwave transmission structure comprises a thin film waveguide on a dielectric substrate.

14. The receiver of claim 7 , in which the planar microwave transmission structure comprises a thin film strip of conductive material and a thin film ground structure insulated from the thin film strip of conductive material, the strip of conductive material and the ground structure being formed on a dielectric substrate.

15. The receiver of claim 14 , in which the strip of conductive material and the ground structure are made of gold.

16. The receiver of claim 14 , in which the dielectric material is a planar quartz board having a predetermined thickness.