IP Library Granted Patent US 8,062,765
Granted Patent B2
US 8,062,765 · App. 11/773,692 · Granted Nov 22, 2011

Silver layer formed by electrosilvering substrate material

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Quick Facts
Patent No.
US 8,062,765
App. No.
11/773,692
Granted
Nov 22, 2011
Kind
B2
Abstract

The inventors have conducted vigorous studies, and discovered as a result that it is possible to form a silver layer having a high reflectance of about 90 to 99% in a visible light area by setting a grain size of an outermost surface of a silver plated layer within a range of 0.5 μm or more to 30 μm or less.

Claims (24)

1. A silver layer formed by electrosilvering a substrate material, wherein a grain size of an outermost surface is within a range of 1 μm or more to 30 μm or less, and wherein a surface roughness Ry of the substrate material is 0.5 μm or more,

and wherein a reflectance of the silver layer is within a range of 90 to 99% in a wavelength range between 400 to 700 nm.

2. The silver layer according to claim 1 , wherein a silver plated layer has a film thickness of 1 μm or more, and the substrate material is formed of copper.

3. The silver layer according to claim 1 , wherein a silver plated layer has a film thickness of 4 μm or more, and the substrate material is formed of nickel.

4. The silver layer according to claim 3 , wherein the substrate material contains no sulfur.

5. A method for manufacturing the silver layer according to claim 1 , comprising the steps of:

heating a silver plated layer at a temperature of 200° C. or more for 30 seconds or more after the electrosilvering.

6. A method for manufacturing the silver layer according to claim 1 , comprising the steps of:

carrying out the electrosilvering by low-cyan bathing.

7. A LED mounted substrate comprising, the silver layer according to claim 1 as a reflective surface.

8. A method for manufacturing the LED mounted substrate according to claim 7 , comprising the steps of:

forming a conductive layer on a substrate surface;

patterning the conductive layer to form a circuit pattern;

forming a copper plated layer on the circuit pattern;

forming a nickel plated layer on the copper plated layer; and

forming a silver plated layer on the nickel plated layer.

9. A light emitting diode package comprising:

a light emitting diode; and a LED mounted substrate mounting the light emitting diode, the LED mounted substrate comprising:

a substrate material; and

a silver layer as a reflective surface, wherein the silver layer comprises a silver plated layer formed by electrosilvering of the substrate material; a grain size of an outermost surface of the silver plated layer is within a range of 1 μm or more to 30 μm or less; and a surface roughness Ry of the substrate material is 0.5 μm or more,

and wherein a reflectance of the silver layer is within a range of 90 to 99% in a wavelength range between 400 to 700 nm.

10. The light emitting diode package according to claim 9 , wherein the silver plated layer has a film thickness of 1 μm or more, and the substrate material is formed of copper.

11. The light emitting diode package according to claim 9 , wherein the silver plated layer has a film thickness of 4 μm or more, and the substrate material is formed of nickel.

12. The light emitting diode package according to claim 11 , wherein the substrate material contains no sulfur.

Assignments (2)
CHANGE OF NAME Recorded Jan 28, 2009
From: MATSUSHITA ELECTRIC WORKS, LTD.
To: PANASONIC ELECTRIC WORKS CO., LTD.
Reel/Frame 022206/0574 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 5, 2007
From: NAKAHARA, YOUICHIRO; IKEGAWA, NAOTO
To: MATSUSHITA ELECTRIC WORKS, LTD.
Reel/Frame 019519/0239 →