METHOD OF MANUFACTURING FERROELECTRIC THIN FILM FOR DATA STORAGE AND METHOD OF MANUFACTURING FERROELECTRIC RECORDING MEDIUM USING THE SAME METHOD
Provided are a ferroelectric thin film having good crystallinity, improved surface roughness, and high density data storage capability, and a method of manufacturing a ferroelectric recording medium including the ferroelectric thin film. The method of manufacturing the ferroelectric thin film includes: forming an amorphous TiO 2 layer on a substrate; forming a PbO(g) atmosphere on the amorphous TiO 2 layer; and reacting the TiO 2 layer with PbO(g) at a temperature of 400 to 650° C. to form a PbTiO 3 ferroelectric thin film having a nanograin structure of 1 to 20 nm on the substrate.
1 . A method of manufacturing a ferroelectric thin film, the method comprising:
forming a substantially amorphous TiO 2 layer on a substrate;
forming a PbO(g) atmosphere on the TiO 2 layer; and
reacting the TiO 2 layer with PbO(g) at a temperature of 400 to 800° C. to form a PbTiO 3 ferroelectric thin film on the substrate.
2 . The method of claim 1 , wherein the PbTiO 3 ferroelectric thin film has a nanograin structure of 1 to 20 nm.
3 . The method of claim 1 , wherein the grain size and the stoichiometry of the PbTiO 3 ferroelectric thin film is controlled by controlling at least one of PbO flux towards the TiO 2 layer, the temperature and reaction time between the TiO 2 layer and the PbO(g).
4 . The method of claim 3 , wherein the reaction time between the TiO 2 layer and the PbO(g) is in the range from 1 second to 60 minutes.
5 . The method of claim 3 , wherein the grain size of the PbTiO 3 ferroelectric thin film ranges from 1 to 5 nm.
6 . The method of claim 1 , wherein the TiO 2 layer is formed at a temperature of 10 to 650° C.
7 . The method of claim 6 , wherein the TiO 2 layer is formed at a temperature of 10 to 400° C.
8 . The method of claim 1 , wherein the TiO 2 layer is formed to a thickness of 1 to 100 nm.
9 . The method of claim 1 , wherein the forming of the TiO 2 layer is carried out by sputtering, thermal evaporation, chemical vapor deposition, metal organic chemical vapor deposition, or atomic layer deposition.
10 . The method of claim 1 , wherein the PbO(g) atmosphere is formed by thermal evaporation or sputtering.
11 . The method of claim 1 , wherein the PbO(g) atmosphere is formed by sputtering a Pb target in an oxygen (O 2 ) atmosphere.
12 . A method of manufacturing a ferroelectric recording medium, the method comprising:
forming an electrode layer made of a conductive material on a substrate;
forming a substantially amorphous TiO 2 layer on the electrode layer;
forming a PbO(g) atmosphere on the TiO 2 layer; and
reacting the TiO 2 layer with PbO(g) at a temperature of 400 to 800° C. to form a PbTiO 3 ferroelectric thin film on the electrode layer.
13 . The method of claim 12 , wherein the PbTiO 3 ferroelectric thin film has a nanograin structure of 1 to 20 nm.
14 . The method of claim 12 , wherein the grain size and the stoichiometry of the PbTiO 3 ferroelectric thin film is controlled by controlling at least one of PbO flux towards the TiO 2 layer, the temperature and reaction time between the TiO 2 layer and the PbO(g).
15 . The method of claim 14 , wherein the reaction time between the TiO 2 layer and the PbO(g) is in the range from 1 second to 60 minutes.
16 . The method of claim 14 , wherein the grain size of the PbTiO 3 ferroelectric thin film ranges from 1 to 5 nm.
17 . The method of claim 12 , wherein the TiO 2 layer is formed at a temperature of 10 to 650° C.
18 . The method of claim 15 , wherein the TiO 2 layer is formed at a temperature of 10 to 400° C.
19 . The method of claim 11 , wherein the TiO 2 layer is formed to a thickness of 1 to 100 nm.
20 . The method of claim 11 , wherein the formation of the TiO 2 layer is carried out by sputtering, thermal evaporation, chemical vapor deposition, metal organic chemical vapor deposition, or atomic layer deposition.
21 . The method of claim 12 , wherein the PbO(g) atmosphere is formed by thermal evaporation or sputtering.
22 . The method of claim 12 , wherein the PbO(g) atmosphere is formed by sputtering a Pb target in an oxygen atmosphere.
23 . A ferroelectric recording medium manufactured by the method of claim 12 .