Methods and apparatus for improved write characteristics in a low voltage SRAM

1. An SRAM cell, comprising:

an anti-parallel storage circuit operable to store a logic high or low value across a true node and a complementary node, where the true node and complementary node are coupled to a true bit line (BLT) and a complementary bit line (BLC), respectively;

a write driver circuit operable to receive a write true WT input and a write complement WC input, and produce drive signals to the BLC and BLT lines; and

a BLC driver operable to receive the WC input and produce a drive signal to push the BLC line to a logic high level in response to the WC input indicating that a logic low level is being written into the anti-parallel storage circuit,

wherein the drive signal from the BLC driver is separate from the write driver circuit.

2. The SRAM cell of claim 1 , wherein the BLC driver is operable to produce the drive signal to the BLC line such that the BLC does not substantially drop from a pre-charge, logic high level during operations in which a logic low is written into the anti-parallel storage circuit.

3. The SRAM cell of claim 1 , wherein the BLC driver includes:

an inverter circuit operable to receive the WC input and produce an inverted signal therefrom; and

a final stage circuit operable to receive the inverted signal and to produce the drive signal to push the BLC line to a logic high level in response to the WC input.

4. The SRAM cell of claim 1 , wherein the BLC driver includes the following circuit:

5. An SRAM memory, comprising:

at least two memory cells, each including: (i) an anti-parallel storage circuit operable to store a logic high or low value across a true node and a complementary node, where the true node and complementary node are coupled to a true bit line (BLT) and a complementary bit line (BLC), respectively, and (ii) a write driver circuit operable to receive a write true WT input and a write complement WC input, and produce drive signals to the BLC and BLT lines; and

a BLC driver operable to receive the WC input and produce respective drive signals to push the respective BLC lines to a logic high level in response to the WC input indicating that a logic low level is being written into the anti-parallel storage circuits,

wherein the drive signals from the BLC driver is separate from the write driver circuits.

6. The SRAM memory of claim 5 , wherein the BLC driver includes:

an inverter circuit operable to receive the WC input and produce an inverted signal therefrom; and

a final stage circuit operable to receive the inverted signal and to produce the respective drive signals to push the respective BLC lines to a logic high level in response to the WC input.

7. The SRAM memory of claim 1 , wherein the BLC driver includes the following circuit:

8. A method, comprising:

writing data into and reading data from an anti-parallel storage circuit of an SRAM memory cell via a true bit line (BLT) and a complementary bit line (BLC); and

preventing the complementary bit line (BLC) from substantially dropping from a pre-charge, logic high voltage level during operations in which a logic low level is written into the anti-parallel storage circuit.

9. The method of claim 8 , comprising: producing a drive signal to push the BLC line to a logic high level in response to a write complement WC input indicating that a logic low level is being written into the anti-parallel storage circuit.

10. The method of claim 9 , wherein the drive signal to push the BLC line to a logic high level is separate from one or more signals from any write driver circuit.