Transparent and conductive nanostructure-film pixel electrode and method of making the same
View Patent ↗A pixel electrode is provided, with a nanostructure-film deposited over an active matrix substrate, such that the pixel electrode makes electrical contact with an underlying layer. Similarly, auxiliary data pads and auxiliary gate pads are provided, which also have nanostructure-films deposited over an active matrix substrate, such that they make electrical contact with underlying layers.
1. A pixel electrode, comprising:
only an interconnected network of nanotubes; wherein
the pixel electrode is electrically conductive and optically transparent,
the pixel electrode is disposed over a non-flat surface such that the pixel electrode covers at least one step of the non-flat surface, the non-flat surface being a substrate including a thin-film transistor,
the thin-film transistor includes a source electrode, a drain electrode, a gate electrode and a gate insulating layer, the gate insulating layer including a gate dielectric,
the pixel electrode makes electrical contact with at least one of the source electrode and the drain electrode,
the pixel electrode is disposed directly on the gate insulating layer, and
an area of the pixel electrode over the thin-film transistor is thicker than a pixel area of the pixel electrode.
2. The pixel electrode of claim 1 ,
wherein the pixel electrode is separated from one of the source electrode and the drain electrode by a protection layer, and
wherein the pixel electrode makes contact with the one of the source electrode and the drain electrode through at least one contact hole in the protection layer.
3. The pixel electrode of claim 2 , wherein contact hole is at least 300 nm deep.
4. The pixel electrode of claim 1 , wherein at least one of the source electrode and the drain electrode includes an interconnected network of nanotubes.
5. The pixel electrode of claim 4 , wherein the pixel electrode has an optical transparency of at least 85% at 550 nm and a corresponding sheet resistance of at least 300 Ω/square.
6. A thin-film transistor substrate, comprising:
a pixel electrode; and
a gate insulting layer; wherein
the pixel electrode is electrically conductive and optically transparent,
the pixel electrode is disposed over a non-flat surface of the thin-film transistor substrate such that the pixel electrode covers at least one step of the non-flat surface,
the pixel electrode includes only an interconnected network of carbon nanotubes,
the thin-film transistor substrate further includes a thin-film transistor having a source electrode, a drain electrode and a gate electrode,
the pixel electrode electrically contacts at least one of the source electrode and the drain electrode,
the gate insulating layer includes a gate dielectric,
the pixel electrode is disposed directly on the gate insulating layer, and
an area of the pixel electrode over the thin-film transistor is thicker than a pixel area of the pixel electrode.
7. The thin-film transistor substrate of claim 6 , further comprising:
an auxiliary pad; wherein
the auxiliary pad includes an interconnected network of carbon nanotubes.
8. The thin-film transistor substrate of claim 6 , wherein at least one of the source electrode and the drain electrode includes an interconnected network of nanotubes.
9. A thin-film transistor substrate, comprising:
a pixel electrode;
a gate insulating layer; and
an auxiliary pad including only an interconnected network of carbon nanotubes; wherein
the pixel electrode is electrically conductive and optically transparent,
the pixel electrode is deposited over a non-flat surface of the thin-film transistor substrate such that the pixel electrode covers at least one step of the non-flat surface,
the thin-film transistor substrate further includes a thin-film transistor having a source electrode, a drain electrode and a gate electrode,
the pixel electrode electrically contacts at least one of the source electrode and the drain electrode,
the gate insulating layer includes a gate dielectric,
the pixel electrode is disposed directly on the gate insulating layer, and
an area of the pixel electrode over the thin-film transistor is thicker than a pixel area of the pixel electrode.
10. The thin-film transistor substrate of claim 9 , wherein the pixel electrode and at least one electrode of the thin-film transistor substrate are formed of a single layer pattern.