ALIGNED POLYMERS FOR AN ORGANIC TFT
A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase.
1 . A method for forming a transistor comprising the step of forming an active interface of the transistor between a semiconductive layer and a gate insulator layer by solution deposition of a second polymer layer on top of a solution-processed polymer layer that has not been converted into an insoluble form prior to the deposition of the second polymer layer.
2 . A method as claimed in claim 1 wherein the second layer forms the gate insulator of the transistor.
3 . A method as claimed in claim 1 , wherein the second layer comprises PVP.
4 . A method as claimed in claim 1 , wherein the said semiconductive layer is the said solution-processed polymer layer.
5 . A method as claimed in claim 1 , wherein the said solution-processed polymer layer is soluble in a non-polar organic solvent, but is insoluble in a polar solvent.
6 . A method as claimed in claim 57 wherein the second polymer layer is deposited from a polar organic solvent, in which the said solution-processed polymer layer is not soluble.
7 . A method as claimed in claim 1 , wherein the second polymer layer is deposited from an alcohol, a protic polar solvent such as water or an aprotic polar solvent such as DMF.
8 . A method as claimed in claim 1 , wherein a source-drain and/or gate electrode of the transistor is also formed from solution.
9 . A method according to claim 1 , wherein the second layer is the gate insulator layer, and the solution-processed polymer layer is a uniaxially aligned liquid crystal polymer film.