Power-on reset circuit using flip-flop and semiconductor device having such power-on reset circuit
View Patent ↗A power-on reset circuit has a dummy flip-flop in addition to a setting flip-flop. Even if resetting is not performed by a power-on reset signal at power-on, output from the dummy flip-flop is used to perform resetting and initialization.
1. A semiconductor device wherein a latch signal is reset to an inactive level in response to a power-on reset signal, comprising:
a setting asynchronous set-reset SR (set-reset) flip-flop comprising a set terminal and a reset terminal, the reset terminal of the setting asynchronous set-reset SR flip-flop receiving a first reset input based on one of a reset signal and the power-on reset signal;
a dummy asynchronous SR (set-reset) flip-flop comprising a set terminal and a reset terminal, the set terminal of the dummy asynchronous SR flip-flop being fixed at a constant potential and being free from receiving any signals, the reset terminal of the dummy asynchronous SR flip-flop receiving a second reset input based on one of the reset signal and the power-on reset signal; and
a logic circuit receiving, as an input, an output signal from said setting asynchronous SR flip-flop and an output signal from said dummy asynchronous SR flip-flop, and outputting a latch signal at an inactive level upon receiving at least one of said output signals.
2. The semiconductor device according to claim 1 , wherein the setting asynchronous SR flip-flop is configured asymmetrical to become a reset state at power-on.
3. The semiconductor device according to claim 2 , wherein the dummy asynchronous SR flip-flop is configured asymmetrical to become a non-reset state at power-on.
4. The semiconductor device according to claim 2 , wherein the dummy asynchronous SR flip-flop is arranged close to the setting asynchronous SR flip-flop, and is configured to have characteristics relating to easiness of state-shifting ranged from a characteristic of being easy to be shifted to the non-reset state at power-on to a characteristic of being easy to be shifted to the reset state that is equivalent to that of the setting asynchronous SR flip-flop.
5. The semiconductor device according to claim 2 , wherein the dummy asynchronous SR flip-flop is provided in a plurality of numbers and arranged close to the setting asynchronous SR flip-flop.
6. The semiconductor device according to claim 5 , wherein the plurality of dummy asynchronous SR flip-flops are configured to have a characteristic of being easy to be shifted to the reset state that is equivalent to that of the setting asynchronous SR flip-flop.
7. The semiconductor device according to claim 5 , wherein each of the plurality of dummy asynchronous SR flip-flops is configured to have characteristics relating to easiness of state-shifting ranged from a characteristic of being easy to be shifted to the non-reset state at power-on to a characteristic of being easy to be shifted to the reset state that is equivalent to that of the setting asynchronous SR flip-flop.
8. The semiconductor device according to claim 2 , wherein the dummy asynchronous SR flip-flop is configured to have a characteristic of being easy to be shifted to the reset state that is equivalent to that of the setting asynchronous SR flip-flop, and upon receiving a different set signal at the set terminal, the dummy asynchronous SR flip-flop outputs a different latch signal.
9. The semiconductor device according to claim 1 , wherein the setting asynchronous SR flip-flop is configured as a symmetrical flip-flop, while the dummy asynchronous SR flip-flop is configured as an asymmetrical flip-flop which is easy to be shifted to a direction in which the latch signal is reset to the inactive level at power-on.
10. The semiconductor device according to claim 1 , wherein said setting asynchronous SR flip-flop comprises first and second NAND circuits, and
wherein a first capacity of a first transistor constituting said first NAND circuit and a second capacity of a second transistor constituting said second NAND circuit are configured asymmetrical to become a reset state at power-on.
11. The semiconductor device according to claim 10 , wherein said dummy asynchronous SR flip-flop comprises third and fourth NAND circuits,
wherein a third capacity of a third transistor constituting said third NAND circuit and a fourth capacity of a fourth transistor constituting said fourth NAND circuit are configured as asymmetrical to become a non-reset state at power-on.
12. The semiconductor device according to claim 10 , wherein said dummy asynchronous SR flip-flop comprises third and fourth NAND circuits,
wherein a third capacity of a third transistor constituting said third NAND circuit and a fourth capacity of a fourth transistor constituting said fourth NAND circuit are configured to have characteristics relating to easiness of state-shifting ranged from a characteristic of being easy to be shifted to a non-reset state at power-on to a characteristic of being easy to be shifted to the reset state that is equivalent to that of the setting asynchronous SR flip-flop.
13. The semiconductor device according to claim 1 , wherein said dummy asynchronous SR flip-flop and the setting asynchronous SR flip-flop are separated by a distance, said distance having a value that results in said dummy asynchronous SR flip-flop and the setting asynchronous SR flip-flop being affected by noise in a same manner.
14. The semiconductor device according to claim 10 , wherein said dummy asynchronous SR flip-flop comprises third and fourth NAND circuits,
wherein a third capacity of a third transistor constituting said third NAND circuit and a fourth capacity of a fourth transistor constituting said fourth NAND circuit are configured to have a characteristic of being easy to be shifted to said reset state that is equivalent to that of the setting asynchronous SR flip-flop, and
wherein, upon receiving a different set signal at the set terminal, said dummy asynchronous SR flip-flop outputs a different latch signal.
15. The semiconductor device according to claim 1 , wherein said setting asynchronous SR flip-flop comprises first and second NAND circuits,
wherein a first capacity of a first transistor constituting said first NAND circuit and a second capacity of a second transistor constituting the second NAND circuit are configured as symmetrical,
wherein said dummy asynchronous SR flip-flop comprises third and fourth NAND circuits, and
wherein a third capacity of a third transistor constituting said third NAND circuit and a fourth capacity of a fourth transistor constituting said fourth NAND circuit are configured to be asymmetrical to become a non-reset state at power-on.
16. The semiconductor device according to claim 1 , wherein said latch signal is reset to an inactive level at power-on by said setting asynchronous SR flip-flop and said dummy asynchronous SR flip-flop.
17. A semiconductor device, comprising:
a setting flip-flop comprising:
a set terminal that receives a set signal;
a reset terminal that receives a first reset input based on one of a reset signal and a power-on reset signal; and
a first output terminal that outputs a first output signal, the first output signal being in a set state in response to an activation of the set signal and in a reset state different from the set state in response to an activation of the reset signal;
a dummy flip-flop comprising:
a set terminal;
a reset terminal that receives a second reset input based on one of the reset signal and the power-on reset signal; and
a second output terminal that outputs a second output signal, the set terminal of the dummy flip-flop being fixed at a constant potential and being free from receiving any signals, the second output signal being in the reset state in response to the activation of the reset signal; and
a logic circuit that receives, as an input, the first and second output signals and outputs a latch signal, the latch signal being deactivated in response to the first output signal being in the reset state or the second output signal being in the set state.
18. A semiconductor device, comprising:
a setting flip-flop comprising a set terminal and a reset terminal, the setting flip-flop including a first NAND and a second NAND, said first NAND and said second NAND being configured so that setting flip-flop outputs a first output signal in a reset state when the semiconductor device is in power-on;
a dummy flip-flop having a set terminal and a reset terminal, the set terminal of the dummy flip-flop being fixed at a constant potential and being free from receiving any signals, the dummy flip-flop including a third NAND and a fourth NAND, said third NAND and said fourth NAND being configured so that the dummy flip-flop outputs a second output signal in a non-reset state that is different from the reset state when the semiconductor device is in power-on; and
a logic circuit that receives, as an input, the first and second output signals, and outputs a latch signal, the latch signal being in the reset state in response to the second output signal being in the non-reset state when the first output signal is in the non-reset state,
wherein the reset terminal of the dummy flip-flop receives a first reset input based on one of the reset signal and a power-on reset signal, and
wherein the reset terminal of the setting flip-flop receives a second reset input based on one of the reset signal and the power-on reset signal.
19. The semiconductor device according to claim 1 , further comprising a first NOR circuit, the first NOR receiving the power-on reset signal and the reset signal and providing the first reset input to the reset terminal of the setting asynchronous set-reset SR flip-flop.
20. The semiconductor device according to claim 1 , further comprising a second NOR circuit, the first NOR receiving the power-on reset signal and the reset signal and providing the second reset input to the reset terminal of the dummy asynchronous set-reset SR flip-flop.