High-frequency power amplifier and communication device
View Patent ↗To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.
1. A high-frequency power amplifier, comprising:
a bias supply transistor for supplying a bias to the base of a high-frequency amplifying transistor;
a bias circuit for supplying a temperature-compensated bias current to the base of said bias supply transistor; and
a first stabilizing element for stabilizing the base potential of said bias supply transistor at high frequencies
wherein said bias circuit includes:
a first temperature compensating transistor the collector of which is connected to the collector of said bias supply transistor, the emitter of which is grounded via a first resistor, and the base of which is connected to the base of said bias supply transistor via a second resistor; and
a second temperature compensating transistor the collector of which is connected to the base of said bias supply transistor, the base of which is connected to the emitter of said first temperature compensating transistor, and the emitter of which is grounded; and
wherein said first stabilizing element is connected between the base of said bias supply transistor and a ground,
said high-frequency power amplifier further comprising a second stabilizing element connected to the base of said first temperature compensating transistor and said ground.
2. The high-frequency power amplifier according to claim 1 , further comprising:
a third stabilizing element connected to the collector of said bias supply transistor and a ground.
3. The high-frequency power amplifier according to claim 1 , further comprising:
a third stabilizing element connected to the base of said second temperature compensating transistor and a ground.
4. A high-frequency power amplifier, comprising:
a bias supply transistor for supplying a bias to the base of a high-frequency amplifying transistor;
a bias circuit for supplying a temperature-compensated bias current to the base of said bias supply transistor; and
a first stabilizing element for stabilizing the base potential of said bias supply transistor at high frequencies,
wherein said bias circuit includes:
a first temperature compensating transistor the collector of which is connected to the collector of said bias supply transistor, the emitter of which is grounded via a first resistor, and the base of which is connected to the base of said bias supply transistor via a second resistor; and
a second temperature compensating transistor the collector of which is connected to the base of said bias supply transistor, the base of which is connected to the emitter of said first temperature compensating transistor, and the emitter of which is grounded;
wherein said first stabilizing element includes:
a first capacitor one end of which is connected to the base of said first temperature compensating transistor;
a second capacitor one end of which is connected to the collector of said second temperature compensating transistor; and
a third capacitor one end of which is grounded; and
wherein the other ends of said first, second and third capacitors are connected to each other.
5. A high-frequency power amplifier, comprising:
a bias supply transistor for supplying a bias to the base of a high-frequency amplifying transistor;
a bias circuit for supplying a temperature-compensated bias current to the base of said bias supply transistor; and
a first stabilizing element for stabilizing the base potential of said bias supply transistor at high frequencies,
wherein said bias circuit includes:
a first temperature compensating transistor the collector of which is connected to the collector of said bias supply transistor, the emitter of which is grounded via a first resistor, and the base of which is connected to the base of said bias supply transistor via a second resistor; and
a second temperature compensating transistor the collector of which is connected to the base of said bias supply transistor, the base of which is connected to the emitter of said first temperature compensating transistor, and the emitter of which is grounded;
wherein said first stabilizing element includes:
a first diode the cathode of which is connected to the base of said first temperature compensating transistor;
a second diode the cathode of which is connected to the collector of said second temperature compensating transistor; and
a capacitor one end of which is grounded; and
wherein the cathodes of said first and second diodes and the other end of said capacitor are connected to each other.
6. A high-frequency power amplifier, comprising:
a bias supply transistor for supplying a bias to the base of a high-frequency amplifying transistor;
a bias circuit for supplying a temperature-compensated bias current to the base of said bias supply transistor; and
a first stabilizing element for stabilizing the base potential of said bias supply transistor at high frequencies,
wherein said bias circuit includes:
a first temperature compensating transistor the collector of which is connected to the collector of said bias supply transistor, the emitter of which is grounded via a first resistor, and the base of which is connected to the base of said bias supply transistor via a second resistor; and
a second temperature compensating transistor the collector of which is connected to the base of said bias supply transistor, the base of which is connected to the emitter of said first temperature compensating transistor, and the emitter of which is grounded;
said first stabilizing element includes: a first capacitor one end of which is connected to the base of said first temperature compensating transistor;
a second capacitor one end of which is connected to the collector of said second temperature compensating transistor; and
a diode the anode of which is grounded; and
wherein the other ends of said first and second capacitors and the cathode of said diode are connected to each other.
7. A high-frequency power amplifier, comprising:
a bias supply transistor for supplying a bias to the base of a high-frequency amplifying transistor;
a bias circuit for supplying a temperature-compensated bias current to the base of said bias supply transistor; and
a first stabilizing element for stabilizing the base potential of said bias supply transistor at high frequencies,
wherein said bias circuit includes:
a first temperature compensating transistor the collector of which is connected to the collector of said bias supply transistor, the emitter of which is grounded via a first resistor, and the base of which is connected to the base of said bias supply transistor via a second resistor; and
a second temperature compensating transistor the collector of which is connected to the base of said bias supply transistor, the base of which is connected to the emitter of said first temperature compensating transistor, and the emitter of which is grounded;
wherein said first stabilizing element includes:
a first diode the cathode of which is connected to the base of said first temperature compensating transistor;
a second diode the cathode of which is connected to the collector of said second temperature compensating transistor; and
a third diode the anode of which is grounded; and
wherein the anodes of said first and second diodes and the cathode of said third diode are connected to each other.