IP Library Granted Patent US 7,456,381
Granted Patent B2
US 7,456,381 · App. 11/783,701 · Granted Nov 25, 2008

Solid-state image sensor, manufacturing method for solid-state image sensor, and camera having an offsetting arrangement between light receiving elements and micro-lenses

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Quick Facts
Patent No.
US 7,456,381
App. No.
11/783,701
Granted
Nov 25, 2008
Kind
B2
Abstract

A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.

Claims (60)

1. A solid-state image sensor comprising:

light-receiving elements arranged in a light-receiving area;

in-layer lenses on said light-receiving elements;

micro-lenses on said in-layer lenses, with a curvature of said micro-lenses being greater than a curvature of said in-layer lenses; and

a transparent film on said micro-lenses,

wherein, in a central portion of said light-receiving area a corresponding one of said micro-lenses is directly above a corresponding one of said light-receiving elements, and in a portion of said light-receiving area that is closer to a periphery of said light-receiving area than a center of said light-receiving area corresponding ones of said micro-lenses are offset from directly above corresponding ones of said light-receiving elements towards the center of said light-receiving area; and

wherein said light-receiving elements, in-layer lenses, micro-lenses and transparent film are constructed and arranged such that when oblique light enters the solid-state image sensor from above the solid-state image sensor at the periphery of said light-receiving area, the oblique light is refracted towards said light-receiving elements by said transparent film and further refracted towards said light-receiving elements by said micro-lenses.

2. The solid-state image sensor according to claim 1 , wherein

in said central portion of said light-receiving area a corresponding one of said in-layer lenses is directly above said corresponding one of said light-receiving elements, and in said portion of said light-receiving area that is closer to the periphery of said light-receiving area than the center of said light-receiving area corresponding ones of said in-layer lenses are offset from directly above corresponding ones of said light-receiving elements towards the center of said light-receiving area,

with an amount of offset of each of said corresponding ones of said micro-lenses being greater than an amount of offset of a respective one of said corresponding ones of said in-layer lenses.

3. The solid-state image sensor according to claim 1 , further comprising:

color filters between said in-layer lenses and said micro-lenses,

wherein, in said central portion of said light-receiving area a corresponding one of said color filters is directly above said corresponding one of said light-receiving elements, and in said portion of said light-receiving area that is closer to the periphery of said light-receiving area than the center of said light-receiving area corresponding ones of said color filters are offset from directly above corresponding ones of said light-receiving elements towards the center of said light-receiving area,

with an amount of offset of each of said corresponding ones of said color filters being greater than an amount of offset of a respective one of said in-layer lenses.

4. The solid-state image sensor according to claim 1 , further comprising:

color filters between said in-layer lenses and said micro-lenses,

wherein, in aid central portion of said light-receiving area a corresponding one of said color filters is directly above said corresponding one of said light-receiving elements, and in said portion of said light-receiving area that is closer to the periphery of said light-receiving area than the center of said light-receiving area corresponding ones of said color filters are offset from directly above corresponding ones of said light-receiving elements towards the center of said light-receiving area,

with an amount of offset of each of said corresponding ones of said color filters being less than an amount of offset of a respective one of said corresponding ones of said micro-lenses.

5. The solid-state image sensor according to claim 1 , wherein

said transparent film comprises a transparent flattening film.

6. The solid-state image sensor according to claim 1 , wherein

a refractive index of said transparent film is less than a refractive index of said micro-lenses.

7. The solid-state image sensor according to claim 1 , wherein

a size of an individual cell including one of said light-receiving elements is at most 3 μm in both length and width.

8. The solid-state image sensor according to claim 1 , wherein

a distance from one of said light-receiving elements to a bottom of a corresponding one of said micro-lenses is within a range of from 3 μm inclusive to 5 μm inclusive.

9. The solid-state image sensor according to claim 1 , wherein

said solid-state image in an MOS-type image senor.

10. A solid-state image sensor comprising:

light-receiving elements arranged in a light-receiving area;

in-layer lenses on said light-receiving elements;

micro-lenses on said in-layer lenses, with a thickness of said micro-lenses being greater than a thickness of said in-layer lenses; and

a transparent film on said micro-lenses,

wherein, in a central portion of said light-receiving area a corresponding one of said micro-lenses is directly above a corresponding one of said light-receiving elements, and in a portion of said light-receiving area that is closer to a periphery of said light-receiving area than a center of said light-receiving area corresponding ones of said micro-lenses are offset from directly above corresponding ones of said light-receiving elements towards the center of said light-receiving area; and

wherein said light-receiving elements, in-layer lenses, micro-lenses and transparent film are constructed and arranged such that when oblique light enters the solid-state image sensor from above the solid-state image sensor at the periphery of said light-receiving area, the oblique light is refracted towards said light-receiving elements by said transparent film and further refracted towards said light-receiving elements by said micro-lenses.

11. The solid-state image sensor according to claim 10 , wherein

in said central portion of said light-receiving area a corresponding one of said in-layer lenses is directly above said corresponding one of said light-receiving elements, and in said portion of said light-receiving area that is closer to the periphery of said light-receiving area than the center of said light-receiving area corresponding ones of said in-layer lenses are offset from directly above corresponding ones of said light-receiving elements towards the center of said light-receiving area,

with an amount of offset of each of said corresponding ones of said micro-lenses being greater than an amount of offset of a respective one of said corresponding ones of said in-layer lenses.

12. The solid-state image sensor according to claim 10 , further comprising:

color filters between said in-layer lenses and said micro-lenses,

wherein, in said central portion of said light-receiving area a corresponding one of said color filters is directly above said corresponding one of said light-receiving elements, and in said portion of said light-receiving area that is closer to the periphery of said light-receiving area than the center of said light-receiving area corresponding ones of said color filters are offset from directly above corresponding ones of said light-receiving elements towards the center of said light-receiving area,

with an amount of offset of each of said corresponding ones of said color filters are being greater than an amount of offset of a respective one of said in-layer lenses.

13. The solid-state image sensor according to claim 10 , further comprising:

color filters between said in-layer lenses and said micro-lenses,

wherein, in said central portion of said light-receiving area a corresponding one of said color filters is directly above said corresponding one of said light-receiving elements, and in said portion of said light-receiving area that is closer to the periphery of said light-receiving area than the center of said light-receiving area corresponding ones of said color filters are offset from directly above corresponding ones of said light-receiving elements towards the center of said light-receiving area,

with an amount of offset of each of said corresponding ones of said color filters being less than an amount of offset of a respective one of said corresponding ones of said micro-lenses.

14. The solid-state image sensor according to claim 10 , wherein

said transparent film comprises a transparent flattening film.

15. The solid-state image sensor according to claim 10 , wherein

a refractive index of said transparent film is less than a refractive index of said micro-lenses.

16. The solid-state image sensor according to claim 10 , wherein

a size of an individual cell including one of said light-receiving elements is at most 3 μm in both length and width.

17. The solid-state image sensor according to claim 10 , wherein

a distance from one of said light-receiving elements to a bottom of a corresponding one of said micro-lenses is within a range of from 3 μm inclusive to 5 μm inclusive.

18. The solid-state image sensor according to claim 10 , wherein

said solid-state image sensor is an MOS-type image sensor.

19. The solid-state image sensor according to claim 1 ,

wherein said light-receiving elements, in-layer lenses, micro-lenses and transparent film are constructed and arranged such that the oblique light refracted by said micro-lenses is further refracted towards said light-receiving elements by said in-layer lenses.

20. The solid-state image sensor according to claim 10 ,

wherein said light-receiving elements, in-layer lenses, micro-lenses and transparent film are constructed and arranged such that the oblique light refracted by said micro-lenses is further refracted towards said light-receiving elements by said in-layer lenses.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2014
From: PANASONIC CORPORATION
To: COLLABO INNOVATIONS, INC.
Reel/Frame 033021/0806 →
LIEN Recorded Jan 13, 2014
From: COLLABO INNOVATIONS, INC.
To: PANASONIC CORPORATION
Reel/Frame 031997/0445 →