Semiconductor device
A high-power semiconductor laser chip 39 with a long cavity length is disposed on a side 42 of a Si chip 37 along the long side of a package, thereby reducing the thickness and size of a semiconductor device 30 for integrating the semiconductor laser chip 39 and a light-receiving element for signal processing. Further, by using the semiconductor device 30 , it is possible to reduce the thickness and size of an optical pickup and the thickness and size of an optical disc drive using the optical pickup.
1 . A semiconductor device for emitting and receiving a laser beam, comprising:
a package for packaging the semiconductor device;
a Si chip formed on a base of the package and including one or a plurality of light-receiving elements for detecting a signal;
a semiconductor laser chip disposed on a Si chip side adjacent to a connection surface with the base such that a cavity length direction and a long side direction of the package are aligned with each other, the semiconductor laser chip emitting a laser beam from an end face of the semiconductor laser chip;
a mirror portion having a reflection plane for reflecting the laser beam perpendicularly to a major surface of the package; and
a lead terminal electrically connected to an electrode of the Si chip and serving as an external electrode of the semiconductor device.
2 . The semiconductor device according to claim 1 , wherein the Si chip and the mirror portion are integrated into a single part.
3 . The semiconductor device according to claim 1 , wherein the Si chip and the mirror portion are separated from each other.
4 . A semiconductor device for emitting and receiving a laser beam, comprising:
a package for packaging the semiconductor device;
a first Si chip formed on a base of the package and including one or a plurality of light-receiving elements for detecting a signal;
a second Si chip formed on the base of the package and including one or a plurality of light-receiving elements for detecting a signal;
a semiconductor laser chip disposed on a first Si chip side adjacent to a connection surface with the base such that a cavity length direction and a long side direction of the package are aligned with each other, the semiconductor laser chip emitting a laser beam from an end face of the semiconductor laser chip;
a mirror portion formed on the second Si chip and having a reflection plane for reflecting the laser beam perpendicularly to a major surface of the package; and
a lead terminal electrically connected to an electrode of one of the first Si chip and the second Si chip and serving as an external electrode of the semiconductor device.
5 . The semiconductor device according to claim 1 , wherein the side of one of the Si chip and the first Si chip is connected to the semiconductor laser chip via an electrode.
6 . The semiconductor device according to claim 4 , wherein the side of one of the Si chip and the first Si chip is connected to the semiconductor laser chip via an electrode.
7 . The semiconductor device according to claim 1 , further comprising:
a surface electrode on a connection surface of the semiconductor laser chip, the connection surface being connected to one of the Si chip and the first Si chip, and
wiring on the side of one of the Si chip and the first Si chip and a formation surface of the light-receiving element for detecting a signal, the wiring being connected to the surface electrode.
8 . The semiconductor device according to claim 4 , further comprising:
a surface electrode on a connection surface of the semiconductor laser chip, the connection surface being connected to one of the Si chip and the first Si chip, and
wiring on the side of one of the Si chip and the first Si chip and a formation surface of the light-receiving element for detecting a signal, the wiring being connected to the surface electrode.
9 . The semiconductor device according to claim 1 , further comprising adjacent surfaces formed between the side and the connection surface such that a length of one of the Si chip and the first Si chip in a direction parallel with the connection surface with the semiconductor laser chip is shorter than a length of the semiconductor laser chip in a direction parallel with the connection surface.
10 . The semiconductor device according to claim 4 , further comprising adjacent surfaces formed between the side and the connection surface such that a length of one of the Si chip and the first Si chip in a direction parallel with the connection surface with the semiconductor laser chip is shorter than a length of the semiconductor laser chip in a direction parallel with the connection surface.
11 . The semiconductor device according to claim 1 , wherein the mirror portion includes a light-receiving element for detecting a part of the laser beam passing through the reflection plane.
12 . The semiconductor device according to claim 4 , wherein the mirror portion includes a light-receiving element for detecting a part of the laser beam passing through the reflection plane.
13 . The semiconductor device according to claim 1 , wherein the reflection plane of the mirror portion includes a low index surface of Si.
14 . The semiconductor device according to claim 4 , wherein the reflection plane of the mirror portion includes a low index surface of Si.
15 . The semiconductor device according to claim 1 , wherein the package includes a package bottom including the base and a package top for extracting the laser beam to an outside of the package.
16 . The semiconductor device according to claim 4 , wherein the package includes a package bottom including the base and a package top for extracting the laser beam to an outside of the package.
17 . The semiconductor device according to claim 15 , wherein the package top includes a diffractive optical element for splitting a part of the laser beam.
18 . The semiconductor device according to claim 16 , wherein the package top includes a diffractive optical element for splitting a part of the laser beam.