IP Library Granted Patent US 8,278,760
Granted Patent B2
US 8,278,760 · App. 11/783,962 · Granted Oct 2, 2012

Semiconductor integrated circuit and method for manufacturing same, and mask

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Quick Facts
Patent No.
US 8,278,760
App. No.
11/783,962
Granted
Oct 2, 2012
Kind
B2
Abstract

A semiconductor integrated circuit includes a first conductor provided in a first region on a substrate and a second conductor provided in a second region on the substrate. The second region is a region enclosing the first region. A minimum design dimension in linewidth of the first conductor is smaller than a minimum design dimension in linewidth of the second conductor.

Claims (11)

1. A semiconductor integrated circuit, comprising:

a first region including a logic block and a PLL block; and

a second region including an I/O block that surrounds said first region,

wherein said second region includes interconnects being limited to a minimum design dimension in linewidth of longer than 0.1 μm, and

wherein said first region includes interconnects having a minimum design dimension in linewidth of equal to or smaller than 0.1 μm.

2. The semiconductor integrated circuit according to claim 1 ,

wherein said first region is spaced apart from said second region, and no conductor pattern is included in a region between said first region and said second region.

3. The semiconductor integrated circuit according to claim 1 ,

wherein said first region has a dimension, which is small enough to fit within a region of a square of 20 mm on a side.

4. The semiconductor integrated circuit according to claim 1 ,

wherein each of said first and said second conductors is an interconnect, gate electrode, silicide layer, or diffusion layer.

Assignments (2)
CHANGE OF NAME Recorded Nov 4, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025311/0869 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2007
From: MATSUBARA, YOSHIHISA
To: NEC ELECTRONICS CORPORATION
Reel/Frame 019243/0267 →