Liquid crystal display device and manufacturing method therefor
View Patent ↗The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
1. A liquid crystal display device comprising an electrode terminal of a Thin Film Transistor (TFT) substrate, wherein said electrode terminal is formed on the TFT substrate comprising a layer mainly comprised of copper and an oxide covering the layer mainly comprised of copper, the oxide having a layered structure of a transparent electrodes, and the layered portion having an ohmic contact, wherein said oxide has a compositional formula of Cu X Mn Y Si Z O(0<X<Y, 0<Z<Y).
2. The liquid crystal display device according to claim 1 , wherein the electrode terminal formed on said insulator is covered by a protective film, and the transparent electrode contacts said oxide through an aperture in the protective film.
3. The liquid crystal display device according to claim 1 , wherein said layer mainly comprising copper is formed from a copper alloy, and an additive element in the copper alloy is Manganese.
4. The liquid crystal display device according to claim 3 , wherein an additive amount of said Manganese is in a range of 0.5 to 25 atomic %.
5. The liquid crystal display device according to claim 1 , wherein the oxide layer contains Copper (Cu) and Silicon (Si).
6. A liquid crystal display device comprising an electrode terminal of a Thin Film Transistor (TFT) substrate, wherein said electrode terminal is formed on the TFT substrate comprising a layer mainly comprised of copper and an oxide covering the layer mainly comprised of copper, the oxide having a layered structure of a transparent electrodes, and the layered portion having an ohmic contact, wherein the oxide layer contains Copper (Cu) and Silicon (Si).
7. The liquid crystal display device according to claim 6 , wherein the oxide comprises Manganese (Mn) and Copper (Cu).
8. The liquid crystal display device according to claim 6 , wherein said oxide has compositional formula of Cu X Mn Y Si Z O (0<X<Y, 0<Z<Y).
9. The liquid crystal display device according to claim 6 , wherein the electrode terminal formed on said insulator is covered by a protective film, and the transparent electrode contacts said oxide through an aperture in the protective film.
10. The liquid crystal display device according to claim 6 , wherein said layer mainly comprising copper is formed from a copper alloy, and an additive element in the copper alloy is Manganese.
11. The liquid crystal display device according to claim 10 , wherein an additive amount of said Manganese is in a range of 0.5 to 25 atomic %.