System for displaying image and laser annealing method for ltps

1 . An method for fabricating a system for displaying images wherein the system comprises a low temperature polysilicon thin film transistor (LTPS-TFT) substrate, the method comprising:

providing a substrate comprising a first metal layer and a silicon film layer; and

illuminating the silicon film layer by laser light having a wavelength larger than 400 nm, wherein the silicon film layer is heated to crystallize by absorbing a part of the laser light, and is heated to crystallize again by absorbing another part of the laser light passing through the silicon film layer and reflected from the first metal layer to the silicon film layer.

2 . The method according to claim 1 , wherein:

the silicon film layer has a first region, a second region and a third region;

the first region, the second region and the third region crystallize after being illuminated by the laser light;

the first region is located between the second region and the third region, is disposed opposite to the first metal layer, and is re-crystallized by absorbing the laser light reflected by the first metal layer; and

crystal grains of the first region after crystallization by absorbing the laser light reflected by the first metal layer are larger than crystal grains of the second region and crystal grains of the third region.

3 . The method according to claim 2 , wherein a portion of the crystal grains of the first region abutting the first metal layer is larger than any other portion of the crystal grains of the first region.

4 . The method according to claim 2 , wherein the first metal layer, the second region and the third region are respectively a gate, a source and a drain of a transistor, and the first region is a channel region of the transistor.

5 . The method according to claim 1 , further comprising:

forming a first insulating layer on the first metal layer, wherein the silicon film layer is disposed on the first insulating layer.

6 . The method according to claim 5 , further comprising:

forming a second metal layer and a second insulating layer on the silicon film layer, wherein the second metal layer is disposed on the second insulating layer.

7 . The method according to claim 1 , further comprising:

forming an insulating layer on the silicon film layer, wherein the first metal layer is disposed on the insulating layer.

8 . The method according to claim 1 , wherein a thickness of the first metal layer is larger than 100 angstroms.

9 . The method according to claim 1 , wherein the laser light is a solid-state laser light.

10 . A system for displaying image, comprising:

an LTPS-TFT substrate having a substrate, a first metal layer and a polysilicon film layer, wherein the first metal layer and the polysilicon film layer are formed on the substrate, the polysilicon film layer has a first region, a second region and a third region, the first region is located between the second region and the third region and is disposed opposite to the first metal layer, and crystal grains of the first region are larger than crystal grains of the second region and crystal grains of the third region.

11 . The system according to claim 10 , wherein after the polysilicon film layer is annealed by laser light, the crystal grains of the first region are larger than the crystal grains of the second region and the third region.

12 . The system according to claim 10 , wherein a portion of the crystal grains of the first region abutting the first metal layer is larger than any other portion of the crystal grains of the first region.

13 . The system according to claim 10 , wherein the first metal layer, the second region and the third region are respectively a gate, a source and a drain of a transistor, and the first region is a channel region of the transistor.

14 . The system according to claim 10 , further comprising:

a first insulating layer, wherein the first metal layer is disposed on the substrate, the first insulating layer is disposed on the first metal layer, and the polysilicon film layer is disposed on the first insulating layer.

15 . The system according to claim 14 , further comprising:

a second insulating layer disposed on the polysilicon film layer; and

a second metal layer disposed on the second insulating layer.

16 . The system according to claim 10 , further comprising:

an insulating layer, wherein the polysilicon film layer is disposed on the substrate, the insulating layer is disposed on the polysilicon film layer, and the first metal layer is disposed on the insulating layer.

17 . The system according to claim 10 , wherein a thickness of the first metal layer is larger than 100 angstroms.

18 . The system according to claim 10 , further comprising:

a liquid crystal display device having a LTPS-TFT display panel and a backlight module disposed at one side of the LTPS-TFT display panel, wherein the LTPS-TFT display panel has the LTPS-TFT substrate.

19 . The system according to claim 10 , further comprising:

an electronic device having a LTPS-TFT display panel and an input unit, wherein the LTPS-TFT display panel has the LTPS-TFT substrate, and the input unit is coupled to the LTPS-TFT display panel and provides input signals to the LTPS-TFT display panel to generate images.

20 . The system according to claim 19 , wherein the electronic device is a mobile phone, a digital camera, a PDA (personal data assistant), a notebook computer, a desktop computer, a television, a car display, or a portable DVD player.