Multi-bit-per-cell flash memory device with an extended set of commands

1. A multi-bit-per-cell flash memory device that supports a command such that each invocation of the command, by a host of the flash memory device, changes respective present values of all reference voltages, of at least one type, of the flash memory device to respective new values of the reference voltages.

2. The flash memory device of claim 1 , wherein the command changes respective present values of all reference voltages of a single type.

3. The flash memory device of claim 2 , wherein the command changes respective present values of all read reference voltages of the flash memory device.

4. The flash memory device of claim 2 , wherein the command changes respective present values of all program verify reference voltages of the flash memory device.

5. The flash memory device of claim 1 , wherein the command changes respective present values of all read reference voltages and of all program verify reference voltages of the flash memory device.

6. The flash memory device of claim 1 , wherein the command has a single argument.

7. The flash memory device of claim 6 , wherein the flash memory device includes a plurality of stored sets of values of the reference voltages of the at least one type and wherein said single argument is an index of one of said stored sets.

8. The flash memory device of claim 6 , wherein said argument is a value to be combined, by an arithmetic operation, with a respective value associated with each reference voltage of the at least one type, to yield said new value of said each reference voltage of the at least one type.

9. The flash memory device of claim 8 , wherein said respective associated values are default values of the reference voltages of the at least one type.

10. The flash memory device of claim 8 , wherein said respective associated values are present values of the reference voltages of the at least one type.

11. The flash memory device of claim 8 , wherein said arithmetic operation is addition.

12. The flash memory device of claim 8 , wherein said arithmetic operation is multiplication.

13. The flash memory device of claim 1 , wherein the command has a plurality of arguments, equal in number to the reference voltages of the at least one type.

14. The flash memory device of claim 13 , wherein said arguments are the new values of the reference voltages of the at least one type.

15. The flash memory device of claim 13 , wherein said arguments are first respective values to be combined, by a common arithmetic operation, with second respective values associated with the reference voltages of the at least one type to yield the new respective values of the reference voltages of the at least one type.

16. The flash memory device of claim 15 , wherein said second respective values are default values of the reference voltages of the at least one type.

17. The flash memory device of claim 15 , wherein said second respective values are present values of the reference voltages of the at least one type.

18. The flash memory device of claim 15 , wherein said arithmetic operation is addition.

19. The flash memory device of claim 15 , wherein said arithmetic operation is multiplication.

20. A storage device comprising:

a memory array including non-voltage storage elements; and

management circuitry coupled to the memory array, the management circuitry stores multiple bits of data per non-volatile storage element, the management circuitry receives a command from a host coupled to the storage device, the management circuitry changes present values of at least one type of all reference voltages of the storage device to new values in response to receiving the command.

21. The storage device of claim 20 , wherein the management circuitry changes present values of all read reference voltages of the storage device to said new values in response to receiving the command.

22. The storage device of claim 20 , wherein the management circuitry changes present values of all program verify reference voltages of the storage device to said new values in response to receiving the command.

23. The storage device of claim 20 , wherein said command has an argument value, said management circuitry performs an arithmetic operation to combine said argument value with a value associated with each reference voltage of the at least one type to yield said new value of said each reference voltage of the at least one type.

24. The storage device of claim 23 , wherein said arithmetic operation is either addition or multiplication.

25. The storage device of claim 20 , wherein the command has a plurality of argument values, said management circuitry performs an arithmetic operation to combine each of the argument values with a value associated with respective ones of the reference voltage of the at least one type to yield said new value of said each reference voltage of the at least one type.

26. The storage device of claim 25 , wherein said arithmetic operation is either addition or multiplication.