CMOS image sensor and method for fabricating the same
A CMOS image sensor and a method for fabricating the same is disclosed, to improve reliability of a driving part transistor and to improve an output voltage of a photodiode, which includes a semiconductor substrate defined as a photodiode transistor region and a driving part transistor region; a first gate insulating layer on the photodiode transistor region of the semiconductor substrate; a second gate insulating layer on the driving part transistor region of the semiconductor substrate, wherein the second gate insulating layer is thicker than the first gate insulating layer; and gate electrodes on the respective first and second gate insulating layers.
1 . A CMOS image sensor comprising:
a semiconductor substrate defined as a photodiode transistor region and a driving part transistor region;
a first gate insulating layer on the photodiode transistor region of the semiconductor substrate;
a second gate insulating layer on the driving part transistor region of the semiconductor substrate, wherein the second gate insulating layer is thicker than the first gate insulating layer; and
gate electrodes on the respective first and second gate insulating layers.
2 . The CMOS image sensor of claim 1 , wherein the photodiode transistor region forms a reset transistor therein, or a reset transistor and a transfer transistor therein.
3 . The CMOS image sensor of claim 1 , wherein the driving part transistor region forms a drive transistor and a select transistor therein.
4 . The CMOS image sensor of claim 1 , wherein the first gate insulating layer is formed at a thickness between 15 Å and 40 Å.
5 . The CMOS image sensor of claim 1 , wherein the second gate insulating layer is formed at a thickness between 30 Å and 80 Å.
6 . The CMOS image sensor of claim 1 , further comprising source/drain regions formed at both sides of the respective gate electrodes of the semiconductor substrate.
7 - 11 . (canceled)